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Favennec, P. N.
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1

Physica status solidi 

Volume 53, Number 2: June 16  Physica status solidi ; Volume 53, Number 2, A
Albrecht, G ; Aly, A. A ; Anand, H. R... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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2

Physica status solidi 

Volume 64, Number 1: March 16  Physica status solidi ; Volume 64, Number 1, A
Achaeya, H . N ; Alberts, H.L ; Arajs, S... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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3

Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogena..:

Kechouane, M. ; Beldi, N. ; Mohammed-Brahim, T....
Philosophical Magazine B.  77 (1998)  1 - p. 137-145 , 1998
Link: https://doi.org/10.1080/..
 
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4

Ion implantation damage and annealing in GaSb:

Callec, R. ; Poudoulec, A. ; Salvi, M....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  80-81 (1993)  - p. 532-537 , 1993
Link: https://doi.org/10.1016/..
 
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5

Characteristics of Deep Electron Levels in Oxygen-Implanted..:

Quan, Dang Tran ; Le Bloa, A. ; Guennouni, Z..
Physica Status Solidi (a).  132 (1992)  1 - p. 145-154 , 1992
Link: https://doi.org/10.1002/..
 
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6

Scanning photoluminescence technique: application to defect..:

L'Haridon, H ; Favennec, P N ; Salvi, M
Semiconductor Science and Technology.  7 (1992)  1A - p. A32-A35 , 1992
Link: https://doi.org/10.1088/..
 
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7

Anomalous behavior of ion-implanted GaSb:

Callec, R. ; Favennec, P. N. ; Salvi, M...
Applied Physics Letters.  59 (1991)  15 - p. 1872-1874 , 1991
Link: https://doi.org/10.1063/..
 
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8

A Composite Layer of Al‐Er‐O Particles in a Silicon Matrix:

Salvi, M. ; L'haridon, H. ; Favennec, P. N....
Journal of The Electrochemical Society.  138 (1991)  6 - p. 1761-1764 , 1991
Link: https://doi.org/10.1149/..
 
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9

Inhomogeneity in a semi-insulating indium phosphide ingot:

L'Haridon, H. ; Callec, R. ; Coquillé, R....
Journal of Crystal Growth.  113 (1991)  1-2 - p. 39-44 , 1991
Link: https://doi.org/10.1016/..
 
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10

Spatial investigation of an iron-doped indium phosphide ing..:

L'Haridon, H. ; Favennec, P.N. ; Coquille, R....
Applied Surface Science.  50 (1991)  1-4 - p. 237-244 , 1991
Link: https://doi.org/10.1016/..
 
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11

Spatial distribution of donors in silicon implanted iron an..:

Favennec, P.N. ; L'Haridon, H. ; Coquillé, R....
Journal of Crystal Growth.  103 (1990)  1-4 - p. 226-233 , 1990
Link: https://doi.org/10.1016/..
 
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12

Epitaxial growth of Si on Er-implanted Si substrates:

Moutonnet, D. ; L'Haridon, H. ; Favennec, P.N....
Materials Letters.  9 (1990)  2-3 - p. 57-59 , 1990
Link: https://doi.org/10.1016/..
 
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13

Assessment of Fe-doped semi-insulating InP crystals by scan..:

Longère, J. Y. ; Schohe, K. ; Krawczyk, S. K....
Journal of Applied Physics.  68 (1990)  2 - p. 755-759 , 1990
Link: https://doi.org/10.1063/..
 
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14

Optical Activation of Er3+ Implanted in Silicon by Oxygen I..:

Favennec, P. N. ; L'Haridon, H. ; Moutonnet, D...
Japanese Journal of Applied Physics.  29 (1990)  4A - p. L524 , 1990
Link: https://doi.org/10.1143/..
 
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15

1.54 μm photoluminescence of erbium-implanted silicon:

Moutonnet, D. ; L'Haridon, H. ; Favennec, P.N....
Materials Science and Engineering: B.  4 (1989)  1-4 - p. 75-77 , 1989
Link: https://doi.org/10.1016/..
 
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