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Fedison, Jeffery B.
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1

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Act..:

Fedison, Jeffery B. ; Cowen, Chris S. ; Garrett, Jerome L....
Materials Science Forum.  527-529 (2006)  - p. 1265-1268 , 2006
Link: https://doi.org/10.4028/..
 
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2

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diod..:

Twigg, Mark E. ; Stahlbush, Robert E. ; Fatemi, M....
Materials Science Forum.  457-460 (2004)  - p. 537-542 , 2004
Link: https://doi.org/10.4028/..
 
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3

Propagation of Current-Induced Stacking Faults and Forward ..:

Stahlbush, Robert E. ; Fedison, Jeffery B. ; Arthur, Steve...
Materials Science Forum.  389-393 (2002)  - p. 427-430 , 2002
Link: https://doi.org/10.4028/..
 
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4

Improvement and Analysis of Implanted-Emitter Bipolar Junct..:

Tang, Yi ; Fedison, Jeffery B. ; Chow, T. Paul
Materials Science Forum.  389-393 (2002)  - p. 1329-1332 , 2002
Link: https://doi.org/10.4028/..
 
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5

Characteristics of Epitaxial and Implanted N-Base 4H-SiC GT..:

Fedison, Jeffery B. ; Chow, T. Paul
Materials Science Forum.  353-356 (2001)  - p. 739-742 , 2001
Link: https://doi.org/10.4028/..
 
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6

Factors Influencing the Design and Performance of 4H-SiC GT..:

Fedison, Jeffery B. ; Chow, T. Paul ; Ghezzo, Mario..
Materials Science Forum.  338-342 (2000)  - p. 1391-1394 , 2000
Link: https://doi.org/10.4028/..
 
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7

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectif..:

Fedison, Jeffery B. ; Li, Z. ; Khemka, V....
Materials Science Forum.  338-342 (2000)  - p. 1367-1370 , 2000
Link: https://doi.org/10.4028/..
 
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8

Electrical Characteristics of In Situ Grown Lateral P +N Ga..:

Fedison, Jeffery B. ; Chow, T. Paul ; Lu, H..
Materials Science Forum.  264-268 (1998)  - p. 1415-1420 , 1998
Link: https://doi.org/10.4028/..
 
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9

Partial dislocations and stacking faults in 4H-SiC PiN diod..:

Twigg, M. E. ; Stahlbush, R. E. ; Fatemi, M....
Journal of Electronic Materials.  33 (2004)  5 - p. 472-476 , 2004
Link: https://doi.org/10.1007/..
 
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10

Erratum: "Structure of stacking faults formed during the fo..:

Twigg, M. E. ; Stahlbush, R. E. ; Fatemi, M....
Applied Physics Letters.  84 (2004)  23 - p. 4816-4816 , 2004
Link: https://doi.org/10.1063/..
 
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11

Structure of stacking faults formed during the forward bias..:

Twigg, M. E. ; Stahlbush, R. E. ; Fatemi, M....
Applied Physics Letters.  82 (2003)  15 - p. 2410-2412 , 2003
Link: https://doi.org/10.1063/..
 
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12

Stacking-fault formation and propagation in 4H-SiC PiN diod..:

Stahlbush, R. E. ; Fatemi, M. ; Fedison, J. B....
Journal of Electronic Materials.  31 (2002)  7 - p. 827-827 , 2002
Link: https://doi.org/10.1007/..
 
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13

Stacking-fault formation and propagation in 4H-SiC PiN diod..:

Stahlbush, R. E. ; Fatemi, M. ; Fedison, J. B....
Journal of Electronic Materials.  31 (2002)  5 - p. 370-375 , 2002
Link: https://doi.org/10.1007/..
 
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14

Electrical characteristics of magnesium-doped gallium nitri..:

Fedison, J. B. ; Chow, T. P. ; Lu, H..
Applied Physics Letters.  72 (1998)  22 - p. 2841-2843 , 1998
Link: https://doi.org/10.1063/..
 
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15

Reactive Ion Etching of GaN in BCl3 /  N 2 Plasmas:

Fedison, J. B. ; Chow, T. P. ; Lu, H..
Journal of The Electrochemical Society.  144 (1997)  8 - p. L221-L224 , 1997
Link: https://doi.org/10.1149/..
 
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