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Feklin, D. F.
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1

Molecular beam epitaxy of III-P x As1 − x solid solutions: ..:

Emelyanov, E. A. ; Putyato, M. A. ; Semyagin, B. R...
Semiconductors.  49 (2015)  2 - p. 157-165 , 2015
Link: https://doi.org/10.1134/..
 
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2

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates:

Emelyanov, E. A. ; Feklin, D. F. ; Putyato, M. A....
Optoelectronics, Instrumentation and Data Processing.  50 (2014)  3 - p. 224-233 , 2014
Link: https://doi.org/10.3103/..
 
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3

InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/S..:

Emel'yanov, Е. А. ; Kokhanenko, А. P. ; Abramkin, D. S....
Russian Physics Journal.  57 (2014)  3 - p. 359-363 , 2014
Link: https://doi.org/10.1007/..
 
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4

Formation of type-II InAs/GaSb strained short-period superl..:

Emel'yanov, E. A. ; Feklin, D. F. ; Vasev, A. V....
Optoelectronics, Instrumentation and Data Processing.  47 (2011)  5 - p. 452-458 , 2011
Link: https://doi.org/10.3103/..
 
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5

InP decomposition phosphorus beam source for MBE: design, p..:

Putyato, M A ; Bolkhovityanov, Yu B ; Chikichev, S I...
Semiconductor Science and Technology.  18 (2003)  6 - p. 417-422 , 2003
Link: https://doi.org/10.1088/..
 
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6

InGaAsP/InGaP superlattices by conventional MBE with molten..:

Putyato, M.A ; Preobrazhenskii, V.V ; Semyagin, B.R...
Journal of Crystal Growth.  247 (2003)  1-2 - p. 23-27 , 2003
Link: https://doi.org/10.1016/..
 
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7

A valved cracking phosphorus beam source using InP thermal ..:

Putyato, Mikhail A ; Preobrazhenskii, Valerii V ; Semyagin, Boris R...
Semiconductor Science and Technology.  24 (2009)  5 - p. 055014 , 2009
Link: https://doi.org/10.1088/..
 
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