I agree that this site is using cookies. You can find further informations
here
.
X
Login
My folder (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
Show Desktop-Version
Toggle navigation
Feng, Ruize
120
results:
Search for persons
X
Format
Online (120)
Mediatypes
Articles (Online) (60)
Bookchapter (Online) (20)
OpenAccess-fulltext (40)
Sorted by: Relevance
Sorted by: Year
?
1
Origin and suppression of kink effect in InP high electron ..:
Zhou, Fu-gui
;
Feng, Rui-ze
;
Cao, Shu-rui
...
Applied Physics Letters. 124 (2024) 6 - p. , 2024
Link:
https://doi.org/10.1063/..
?
2
A Four-Port Noise De-Embedding Methodology for On-Wafer Mic..:
Feng, Zhiyu
;
Ding, Wucang
;
Su, Yongbo
...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 7 - p. 943-946 , 2024
Link:
https://doi.org/10.1109/..
?
3
Performance Improvement by SiO₂ Hardmask in 100-nm InP-Base..:
Cao, Shurui
;
Feng, Ruize
;
Zhou, Fugui
...
IEEE Transactions on Electron Devices. 70 (2023) 5 - p. 2262-2267 , 2023
Link:
https://doi.org/10.1109/..
?
4
Impact of SiO2 hardmask on the DC and RF characteristics of..:
Zhou, Fugui
;
Feng, Ruize
;
Cao, Shurui
...
Journal of Materials Science: Materials in Electronics. 34 (2023) 29 - p. , 2023
Link:
https://doi.org/10.1007/..
?
5
An Accurate Model for InP HEMT Small-Signal Equivalent Circ..:
Feng, Zhiyu
;
Cao, Shurui
;
Feng, Ruize
...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 934-940 , 2023
Link:
https://doi.org/10.1109/..
?
6
Accurate Modeling Approach for InP fT-Doubler Based on Elec..:
Wang, Yanzhe
;
Ding, Jianjun
;
Feng, Ruize
...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 941-946 , 2023
Link:
https://doi.org/10.1109/..
?
7
Heterogeneous integration of InP HEMTs on quartz wafer usin..:
Wang, Yan-Fu
;
Wang, Bo
;
Feng, Rui-Ze
...
Chinese Physics B. 31 (2022) 1 - p. 018502 , 2022
Link:
https://doi.org/10.1088/..
?
8
Impact of symmetric gate-recess length on the DC and RF cha..:
Feng, Ruize
;
Wang, Bo
;
Cao, Shurui
...
Chinese Physics B. 31 (2022) 1 - p. 018505 , 2022
Link:
https://doi.org/10.1088/..
?
9
Enhancement of f MAX of InP-based HEMTs by double-recessed ..:
Wang, Bo
;
Ding, Peng
;
Feng, Rui-Ze
...
Chinese Physics B. 31 (2022) 5 - p. 058506 , 2022
Link:
https://doi.org/10.1088/..
?
10
Impact of gate offset in gate recess on DC and RF performan..:
Cao, Shurui
;
Feng, Ruize
;
Wang, Bo
...
Chinese Physics B. 31 (2022) 5 - p. 058502 , 2022
Link:
https://doi.org/10.1088/..
?
11
High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:
Wang, Bo
;
Wang, Yanfu
;
Feng, Ruize
...
Electronics. 11 (2022) 2 - p. 259 , 2022
Link:
https://doi.org/10.3390/..
?
12
Ultra‐thin Body Buried In0.35Ga0.65As Channel MOSFETs with ..:
Bo, WANG
;
Peng, DING
;
Ruize, FENG
...
Chinese Journal of Electronics. 30 (2021) 6 - p. 1017-1021 , 2021
Link:
https://doi.org/10.1049/..
?
13
High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:
Bo Wang
;
Yanfu Wang
;
Ruize Feng
...
https://www.mdpi.com/2079-9292/11/2/259. , 2022
Link:
https://doi.org/10.3390/..
?
14
High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:
Bo Wang
;
Yanfu Wang
;
Ruize Feng
...
Semiconductor Devices. , 2022
Link:
https://doi.org/10.3390/..
?
15
Effect of microstructure evolution on tensile properties of..:
Xie, Yong
;
Zhang, Ruize
;
Yan, Zhenyu
...
Materials Science and Engineering: A. 902 (2024) - p. 146021 , 2024
Link:
https://doi.org/10.1016/..
1-15