Feng, Sirui
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1

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1365-1382 , 2024
 
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3

GaN-Based Charge Trapping Memory With an AlN Interfacial La..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui...
IEEE Electron Device Letters.  45 (2024)  7 - p. 1133-1136 , 2024
 
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6

Electroluminescence and Gate Carrier Dynamics in a Schottky..:

Feng, Sirui ; Liao, Hang ; Chen, Tao...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1592-1595 , 2023
 
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8

HyFET—A GaN/SiC Hybrid Field-Effect Transistor:

, In: 2023 International Electron Devices Meeting (IEDM),
Feng, Sirui ; Zheng, Zheyang ; Wang, Yuru... - p. 1-4 , 2023
 
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12

Endurance Improvement of GaN Bipolar Charge Trapping Memory..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui..
IEEE Electron Device Letters.  44 (2023)  9 - p. 1408-1411 , 2023
 
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13

Effects of glycation methods on the interfacial behavior an..:

Feng, Sirui ; Zhang, Suyun ; Jiang, Minghao...
International Journal of Biological Macromolecules.  233 (2023)  - p. 123554 , 2023
 
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15

GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monol..:

Lyu, Gang ; Wei, Jin ; Song, Wenjie...
IEEE Transactions on Electron Devices.  69 (2022)  8 - p. 4162-4169 , 2022
 
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