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Feudel, Thomas
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1

Advantages of Faceted P-Raised Source/Drain in Fully Deplet..:

Aydin, Ömür Işıl ; Holt, Judson Robert ; Le Royer, Cyrille...
ECS Transactions.  86 (2018)  7 - p. 199-206 , 2018
Link: https://doi.org/10.1149/..
 
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2

RF-pFET in fully depleted SOI demonstrates 420 GHz FT:

, In: 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
Watts, Josef ; Sundaram, Kumaran ; Johnny Chew, Kok Wai... - p. 84-87 , 2017
Link: https://doi.org/10.1109/..
 
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3

Low Power FDSOI Technology and Devices for RF Applications:

Schwan, Christoph ; Chew, Kok Wai ; Feudel, Thomas...
ECS Transactions.  75 (2016)  8 - p. 21-27 , 2016
Link: https://doi.org/10.1149/..
 
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4

Optimization of ClusterCarbon™ process parameters for strai..:

Sekar, Karuppanan ; Krull, Wade A. ; Horsky, Thomas N....
Materials Science and Engineering: B.  154-155 (2008)  - p. 122-125 , 2008
Link: https://doi.org/10.1016/..
 
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5

Reduced Parameter Fluctuation with Laser and Flash Lamp Ann..:

Feudel, Thomas ; Bayha, B ; Burbach, G...
ECS Transactions.  6 (2007)  1 - p. 373-380 , 2007
Link: https://doi.org/10.1149/..
 
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6

Influence of co-implantation on the activation and diffusio..:

Herden, Marc ; Gehre, Daniel ; Feudel, Thomas...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  237 (2005)  1-2 - p. 203-207 , 2005
Link: https://doi.org/10.1016/..
 
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7

Influence of HALO and drain-extension doping gradients on t..:

Erlebach, Axel ; Feudel, Thomas ; Schenk, Andreas.
Materials Science and Engineering: B.  114-115 (2004)  - p. 15-19 , 2004
Link: https://doi.org/10.1016/..
 
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8

Preface:

Mannino, Giovanni ; Feudel, Thomas ; Pichler, Peter.
Materials Science and Engineering: B.  114-115 (2004)  - p. 1-2 , 2004
Link: https://doi.org/10.1016/..
 
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9

Atomistic simulation of ion implantation and its applicatio..:

Posselt, Matthias ; Schmidt, Bruno ; Feudel, Thomas.
Materials Science and Engineering: B.  71 (2000)  1-3 - p. 128-136 , 2000
Link: https://doi.org/10.1016/..
 
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10

Comprehensive analytical expression for dose dependent ion-..:

Suzuki, Kunihiro ; Sudo, Ritsuo ; Tada, Yoko...
Solid-State Electronics.  42 (1998)  9 - p. 1671-1678 , 1998
Link: https://doi.org/10.1016/..
 
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11

Atomistic simulation of ion implantation into 2D structures:

Schmidt, Bruno ; Posselt, Matthias ; Strecker, Norbert.
Computational Materials Science.  11 (1998)  2 - p. 87-95 , 1998
Link: https://doi.org/10.1016/..
 
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12

Pseudoepitaxial transrotational structures in 14 nm-thick N..:

Alberti, Alessandra ; Bongiorno, Corrado ; Cafra, Brunella...
http://arxiv.org/abs/cond-mat/0510660.  , 2005
Link: http://arxiv.org/abs/con..
 
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