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Finkman, E.
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1

The effect of gallium implantation on the optical propertie..:

Draganski, M.A. ; Finkman, E. ; Gibson, B.C....
Diamond and Related Materials.  35 (2013)  - p. 47-52 , 2013
Link: https://doi.org/10.1016/..
 
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2

Tailoring the optical constants of diamond by ion implantat..:

Draganski, M. A. ; Finkman, E. ; Gibson, B. C....
Optical Materials Express.  2 (2012)  5 - p. 644 , 2012
Link: https://doi.org/10.1364/..
 
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3

Interlevel transitions and two-photon processes in Ge/Si qu..:

Finkman, E. ; Shuall, N. ; Vardi, A...
Journal of Applied Physics.  103 (2008)  9 - p. , 2008
Link: https://doi.org/10.1063/..
 
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4

Effect of doping location on photoconductive spectrum of Si..:

Schacham, S. E. ; Vardi, A. ; Le Thanh, V..
physica status solidi (a).  204 (2007)  2 - p. 477-482 , 2007
Link: https://doi.org/10.1002/..
 
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5

Intraband polaron dynamics of excited carriers inInAs∕InxAl..:

Bahir, G. ; Finkman, E. ; Fossard, F....
Physical Review B.  71 (2005)  7 - p. , 2005
Link: https://doi.org/10.1103/..
 
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6

Spectroscopy of the electronic states in InAs quantum dots ..:

Fossard, F. ; Helman, A. ; Fishman, G....
Physical Review B.  69 (2004)  15 - p. , 2004
Link: https://doi.org/10.1103/..
 
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7

From GaAs:N to oversaturated GaAsN: Analysis of the band-ga..:

Taliercio, T. ; Intartaglia, R. ; Gil, B....
Physical Review B.  69 (2004)  7 - p. , 2004
Link: https://doi.org/10.1103/..
 
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8

Intraband spectroscopy of self-organized InAs/InAlAs nanost..:

Fossard, F. ; Helman, A. ; Julien, F.H....
Physica E: Low-dimensional Systems and Nanostructures.  17 (2003)  - p. 82-83 , 2003
Link: https://doi.org/10.1016/..
 
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9

Temperature dependence of responsivity in quantum dot infra..:

SCHACHAM, S ; BAHIR, G ; FINKMAN, E...
Physica E: Low-dimensional Systems and Nanostructures.  17 (2003)  - p. 636-637 , 2003
Link: https://doi.org/10.1016/..
 
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10

Photoconductive spectral analysis of InAs quantum dot under..:

Schacham, S.E. ; Bahir, G. ; Finkman, E....
Infrared Physics & Technology.  44 (2003)  5-6 - p. 509-512 , 2003
Link: https://doi.org/10.1016/..
 
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11

Photoconductivity of Ge/Si quantum dot photodetectors:

Rappaport, N. ; Finkman, E. ; Boucaud, P....
Infrared Physics & Technology.  44 (2003)  5-6 - p. 513-516 , 2003
Link: https://doi.org/10.1016/..
 
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12

The anomalous bandgap bowing in GaAsN:

Tisch, U. ; Finkman, E. ; Salzman, J.
Applied Physics Letters.  81 (2002)  3 - p. 463-465 , 2002
Link: https://doi.org/10.1063/..
 
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13

Short-range order and strain in SiGeC alloys probed by phon..:

Finkman, E. ; Meyer, F. ; Mamor, M.
Journal of Applied Physics.  89 (2001)  5 - p. 2580-2587 , 2001
Link: https://doi.org/10.1063/..
 
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14

The effect of strain in InP/InGaAs quantum-well infrared ph..:

Gusakov, Y. ; Finkman, E. ; Bahir, G..
Applied Physics Letters.  79 (2001)  16 - p. 2508-2510 , 2001
Link: https://doi.org/10.1063/..
 
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15

Midinfrared absorption and photocurrent spectroscopy of InA..:

Sauvage, S. ; Boucaud, P. ; Brunhes, T....
Applied Physics Letters.  78 (2001)  16 - p. 2327-2329 , 2001
Link: https://doi.org/10.1063/..
 
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