E-LIB Suche - Ergebnisse für: Fiorentini, S.

1

Micromagnetic modeling of double spin-torque magnetic tunne..:

Pruckner, B. ; Fiorentini, S. ; Goes, W...
Physica B: Condensed Matter. 688 (2024) - p. 416124 , 2024

Link: https://doi.org/10.1016/..

2

Comprehensive evaluation of torques in ultra-scaled MRAM de..:

Fiorentini, S. ; Ender, J. ; Selberherr, S....
Solid-State Electronics. 199 (2023) - p. 108491 , 2023

Link: https://doi.org/10.1016/..

3

The influence of interface effects on the switching behavio..:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics. 201 (2023) - p. 108590 , 2023

Link: https://doi.org/10.1016/..

4

A multi-level cell for ultra-scaled STT-MRAM realized by ba..:

Bendra, M. ; Fiorentini, S. ; Selberherr, S...
Solid-State Electronics. 208 (2023) - p. 108738 , 2023

Link: https://doi.org/10.1016/..

5

Back-Hopping in Ultra-Scaled MRAM Cells:

, In: 2023 46th MIPRO ICT and Electronics Convention (MIPRO),

Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 159-162 , 2023

Link: https://doi.org/10.23919..

6

Modeling advanced spintronic based magnetoresistive memory:

, In: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022),

Fiorentini, S. ; Bendra, M. ; Ender, J.... - p. None , 2022

Link: https://doi.org/10.1049/..

7

Spin Transfer Torques in Ultra-Scaled MRAM Cells:

, In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO),

Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 129-132 , 2022

Link: https://doi.org/10.23919..

8

Interface effects in ultra-scaled MRAM cells:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics. 194 (2022) - p. 108373 , 2022

Link: https://doi.org/10.1016/..

9

Temperature increase in STT-MRAM at writing: A fully three-..:

Hadámek, T. ; Fiorentini, S. ; Bendra, M....
Solid-State Electronics. 193 (2022) - p. 108269 , 2022

Link: https://doi.org/10.1016/..

10

Numerical Analysis of Deterministic Switching of a Perpendi..:

de Orio, R. L. ; Ender, J. ; Fiorentini, S....
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 61-67 , 2021

Link: https://doi.org/10.1109/..

11

Coupled spin and charge drift-diffusion approach applied to..:

Fiorentini, S. ; Ender, J. ; Selberherr, S....
Solid-State Electronics. 186 (2021) - p. 108103 , 2021

Link: https://doi.org/10.1016/..

12

Improving failure rates in pulsed SOT-MRAM switching by rei..:

Ender, J. ; de Orio, R.L. ; Fiorentini, S....
Microelectronics Reliability. 126 (2021) - p. 114231 , 2021

Link: https://doi.org/10.1016/..

13

Two-pulse switching scheme and reinforcement learning for e..:

de Orio, R.L. ; Ender, J. ; Fiorentini, S....
Solid-State Electronics. 185 (2021) - p. 108075 , 2021

Link: https://doi.org/10.1016/..

14

Perpendicular STT-MRAM Switching at Fixed Voltage and at Fi..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Fiorentini, S. ; de Orio, R.L. ; Selberherr, S.... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

15

Robust magnetic field-free switching of a perpendicularly m..:

de Orio, R.L. ; Makarov, A. ; Selberherr, S....
Solid-State Electronics. 168 (2020) - p. 107730 , 2020

Link: https://doi.org/10.1016/..