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Fornasier, Mirko
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1

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobil..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Saro, Marco ; de Pieri, Francesco ; Carlotto, Andrea... - p. 5B.2-1-5B.2-8 , 2024
Link: https://doi.org/10.1109/..
 
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2

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:

Zanoni, Enrico ; De Santi, Carlo ; Gao, Zhan...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1396-1407 , 2024
Link: https://doi.org/10.1109/..
 
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3

Transconductance Overshoot, a New Trap-Related Effect in Al..:

Zhan, Gao ; Rampazzo, Fabiana ; De Santi, Carlo...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3005-3010 , 2023
Link: https://doi.org/10.1109/..
 
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4

Understanding the Optical Degradation of 845 nm Micro-Trans..:

Zenari, Michele ; Buffolo, Matteo ; Fornasier, Mirko...
IEEE Journal of Quantum Electronics.  59 (2023)  4 - p. 1-10 , 2023
Link: https://doi.org/10.1109/..
 
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5

Thermally-activated failure mechanisms of 0.25 \ \mu \mathr..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Gao, Zhan ; Chiocchetta, Francesca ; Rampazzo, Fabiana... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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6

Dynamic Behavior of Threshold Voltage and ID–VDS Kink in Al..:

Gao, Zhan ; De Santi, Carlo ; Rampazzo, Fabiana...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6256-6261 , 2023
Link: https://doi.org/10.1109/..
 
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7

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:

Zanoni, Enrico ; Santi, Carlo De ; Gao, Zhan...
info:eu-repo/semantics/altIdentifier/wos/WOS:001087462000001.  , 2024
Link: https://hdl.handle.net/1..
 
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