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Foronda, Humberto Miguel
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Online (51)
Mediatypes
Articles (Online) (50)
OpenAccess-fulltext (1)
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english (42)
spanish (1)
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1
Reducing the grain density in semipolar (11-22) AlGaN surfa..:
Foronda, Humberto Miguel
;
Graupeter, Sarina
;
Mehnke, Frank
...
Japanese Journal of Applied Physics. 58 (2019) SC - p. SC1026 , 2019
Link:
https://doi.org/10.7567/..
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2
Validation of Vegard's Law for Lattice Matching InxAl1-xN t..:
Foronda, Humberto Miguel
qt7992c0zt. , 2017
Link:
https://escholarship.org..
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3
In-hospital care, complications, and 4-month mortality foll..:
Prieto-Alhambra, Daniel
;
Reyes, Carlen
;
Sainz, Miguel Sanz
...
Archives of Osteoporosis. 13 (2018) 1 - p. , 2018
Link:
https://doi.org/10.1007/..
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4
Quantification of Trace-Level Silicon Doping in AlxGa1–xN F..:
Spasevski, Lucia
;
Buse, Ben
;
Edwards, Paul R.
...
Microscopy and Microanalysis. 27 (2021) 4 - p. 696-704 , 2021
Link:
https://doi.org/10.1017/..
?
5
Electrical properties of (11-22) Si:AlGaN layers at high Al..:
Foronda, Humberto M.
;
Hunter, Daniel A.
;
Pietsch, Mike
...
Applied Physics Letters. 117 (2020) 22 - p. , 2020
Link:
https://doi.org/10.1063/..
?
6
Characterization of traps in InAlN by optically and thermal..:
Farzana, Esmat
;
Foronda, Humberto M.
;
Jackson, Christine M.
...
Journal of Applied Physics. 124 (2018) 14 - p. , 2018
Link:
https://doi.org/10.1063/..
?
7
Low threading dislocation density aluminum nitride on silic..:
Foronda, Humberto M.
;
Wu, Feng
;
Zollner, Christian
...
Journal of Crystal Growth. 483 (2018) - p. 134-139 , 2018
Link:
https://doi.org/10.1016/..
?
8
Analysis of Vegard's law for lattice matching InxAl1−xN to ..:
Foronda, Humberto M.
;
Mazumder, Baishakhi
;
Young, Erin C.
...
Journal of Crystal Growth. 475 (2017) - p. 127-135 , 2017
Link:
https://doi.org/10.1016/..
?
9
Curvature and bow of bulk GaN substrates:
Foronda, Humberto M.
;
Romanov, Alexey E.
;
Young, Erin C.
...
Journal of Applied Physics. 120 (2016) 3 - p. , 2016
Link:
https://doi.org/10.1063/..
?
10
Improving source efficiency for aluminum nitride grown by m..:
Foronda, Humberto M
;
Laurent, Matthew A
;
Yonkee, Benjanim
...
Semiconductor Science and Technology. 31 (2016) 8 - p. 085003 , 2016
Link:
https://doi.org/10.1088/..
?
11
Publisher's Note: "Curvature and bow of bulk GaN substrates..:
Foronda, Humberto M.
;
Romanov, Alexey E.
;
Young, Erin C.
...
Journal of Applied Physics. 120 (2016) 11 - p. , 2016
Link:
https://doi.org/10.1063/..
?
12
Structure and properties of La-modified Na0.5Bi0.5TiO3 at a..:
Aksel, Elena
;
Forrester, Jennifer S.
;
Foronda, Humberto M.
...
Journal of Applied Physics. 112 (2012) 5 - p. , 2012
Link:
https://doi.org/10.1063/..
?
13
Impact of roughening density on the light extraction effici..:
Saifaddin, Burhan K.
;
Iza, Michael
;
Foronda, Humberto
...
Optics Express. 27 (2019) 16 - p. A1074 , 2019
Link:
https://doi.org/10.1364/..
?
14
Fabrication technology for high light-extraction ultraviole..:
SaifAddin, Burhan K
;
Almogbel, Abdullah
;
Zollner, Christian J
...
Semiconductor Science and Technology. 34 (2019) 3 - p. 035007 , 2019
Link:
https://doi.org/10.1088/..
?
15
Field Evaporation Behavior of Ternary Compound Semiconducto..:
Mazumder, Baishakhi
;
Broderick, Scott
;
Rajan, Krishna
...
Microscopy and Microanalysis. 23 (2017) S1 - p. 636-637 , 2017
Link:
https://doi.org/10.1017/..
1-15