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Fouchier, Marc
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1

On method of estimating recombination rates by analysis of ..:

Sakowski, Konrad ; Borowik, Łukasz ; Rochat, Névine...
Journal of Luminescence.  269 (2024)  - p. 120473 , 2024
Link: https://doi.org/10.1016/..
 
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2

Degree of Polarization of Cathodoluminescence from a GaAs F..:

Cassidy, Daniel T. ; Landesman, Jean-Pierre ; Mokhtari, Merwan...
Optics.  4 (2023)  2 - p. 272-287 , 2023
Link: https://doi.org/10.3390/..
 
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3

Design Rules for Addressing Material Asymmetry Induced by T..:

Shang, Chen ; Hughes, Eamonn T. ; Begley, Matthew R....
Advanced Functional Materials.  33 (2023)  45 - p. , 2023
Link: https://doi.org/10.1002/..
 
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4

Polydiacetylene photocomposite material obtained by orthogo..:

Teyssandier, Joan ; Fouchier, Marc ; Lalevée, Jacques.
Materials Advances.  3 (2022)  5 - p. 2558-2567 , 2022
Link: https://doi.org/10.1039/..
 
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5

Nonheteroepitaxial CsPbBr3/Cs4PbBr6 Interfaces Result in No..:

Cohen, Eyal ; Nagel, Alina ; Fouchier, Marc...
Chemistry of Materials.  34 (2022)  12 - p. 5377-5385 , 2022
Link: https://doi.org/10.1021/..
 
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6

Photoluminescence mapping of the strain induced in InP and ..:

Gérard, Solène ; Mokhtari, Merwan ; Landesman, Jean-Pierre...
Thin Solid Films.  706 (2020)  - p. 138079 , 2020
Link: https://doi.org/10.1016/..
 
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7

Mechanical stress in InP and GaAs ridges formed by reactive..:

Landesman, Jean-Pierre ; Fouchier, Marc ; Pargon, Erwine...
Journal of Applied Physics.  128 (2020)  22 - p. , 2020
Link: https://doi.org/10.1063/..
 
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8

Characterization of Plasma Induced Damage and Strain on InP..:

Fouchier, Marc ; Fahed, Maria ; Pargon, Erwine...
MRS Advances.  3 (2018)  57-58 - p. 3373-3378 , 2018
Link: https://doi.org/10.1557/..
 
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9

Mapping of mechanical strain induced by thin and narrow die..:

Landesman, Jean-Pierre ; Cassidy, Daniel T. ; Fouchier, Marc...
Optics Letters.  43 (2018)  15 - p. 3505 , 2018
Link: https://doi.org/10.1364/..
 
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10

Mechanical Stress in InP Structures Etched in an Inductivel..:

Landesman, Jean-Pierre ; Cassidy, Daniel T. ; Fouchier, Marc...
Journal of Electronic Materials.  47 (2018)  9 - p. 4964-4969 , 2018
Link: https://doi.org/10.1007/..
 
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11

HBr Plasma Treatment Versus VUV Light Treatment to Improve ..:

Pargon, Erwine ; Azarnouche, Laurent ; Fouchier, Marc...
Plasma Processes and Polymers.  8 (2011)  12 - p. 1184-1195 , 2011
Link: https://doi.org/10.1002/..
 
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12

Novel adatom-terminated step structure on the Ge(111)-(1×1)..:

Fouchier, Marc ; McEllistrem, Marcus T ; Boland, John J
Surface Science.  385 (1997)  1 - p. l905-l910 , 1997
Link: https://doi.org/10.1016/..
 
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13

Design Rules for Addressing Material Asymmetry Induced by T..:

Shang, Chen ; Hughes, Eamonn T ; Begley, Matthew R...
https://onlinelibrary.wiley.com/doi/10.1002/adfm.202304645.  , 2023
Link: http://hdl.handle.net/10..
 
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14

Degree of Polarization of Cathodoluminescence from a GaAs F..:

Cassidy, Daniel, T ; Landesman, Jean-Pierre ; Mokhtari, Merwan...
info:eu-repo/semantics/altIdentifier/doi/10.3390/opt4020019.  , 2023
Link: https://hal.science/hal-..
 
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15

Degree of Polarization of Cathodoluminescence from a GaAs F..:

Cassidy, Daniel, T ; Landesman, Jean-Pierre ; Mokhtari, Merwan...
info:eu-repo/semantics/altIdentifier/doi/10.3390/opt4020019.  , 2023
Link: https://hal.science/hal-..
 
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