E-LIB Suche - Ergebnisse für: Frisina, F.

1

Advances in the use of GABAergic interneurons for the treat..:

Frisina, F ; Valetti, G ; Zuccarini, G..
Journal of Stem Cell Therapy and Transplantation. 3 (2019) 1 - p. 009-022 , 2019

Link: https://doi.org/10.29328..

2

Reliability of Medium Blocking Voltage Power VDMOSFET in Ra..:

Velardia, F. ; Iannuzzo, F. ; Busatto, G....
Microelectronics Reliability. 43 (2003) 9-11 - p. 1847-1851 , 2003

Link: https://doi.org/10.1016/..

3

Short circuit transient behavior of IGBT devices in series ..:

, In: Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on,

Frisina, F. ; Melito, M. ; Musumeci, S... - p. None , 2002

Link: https://doi.org/10.1109/..

4

Structural characterisation of titanium silicon carbide rea..:

Makhtari, A. ; La Via, F. ; Raineri, V...
Microelectronic Engineering. 55 (2001) 1-4 - p. 375-381 , 2001

Link: https://doi.org/10.1016/..

5

Oxidation of ion implanted silicon carbide:

Makhtari, A ; Raineri, V ; La Via, F...
Materials Science in Semiconductor Processing. 4 (2001) 4 - p. 345-349 , 2001

Link: https://doi.org/10.1016/..

6

Enhanced oxidation of ion-damaged 6H-SiC:

Makhtari, A. ; Raineri, V. ; Calcagno, L....
Philosophical Magazine B. 80 (2000) 4 - p. 661-667 , 2000

Link: https://doi.org/10.1080/..

7

Radiation damage–He interaction in He implanted Si during b..:

Raineri, V. ; Coffa, S. ; Saggio, M...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147 (1999) 1-4 - p. 292-297 , 1999

Link: https://doi.org/10.1016/..

8

Voids in silicon power devices:

Raineri, V. ; Saggio, M. ; Frisina, F..
Solid-State Electronics. 42 (1998) 12 - p. 2295-2301 , 1998

Link: https://doi.org/10.1016/..

9

Characterization of oxide layers grown on implanted silicon:

Franco, G. ; Raineri, V. ; Frisina, F..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96 (1995) 1-2 - p. 99-103 , 1995

Link: https://doi.org/10.1016/..

10

Three-dimensional concentration profiles of hybrid diffuser..:

Coffa, S. ; Privitera, V. ; Frisina, F..
Journal of Applied Physics. 74 (1993) 1 - p. 195-200 , 1993

Link: https://doi.org/10.1063/..

11

Diffusion and lifetime engineering in silicon:

Coffa, S. ; Tavolo, N. ; Frisina, F...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74 (1993) 1-2 - p. 47-52 , 1993

Link: https://doi.org/10.1016/..

12

Diffusion and Electrical Behavior of Al Implanted into Capp..:

Scandurra, A. ; Galvagno, G. ; Raineri, V...
Journal of The Electrochemical Society. 140 (1993) 7 - p. 2057-2062 , 1993

Link: https://doi.org/10.1149/..

13

Implants of aluminum into silicon:

Galvagno, G. ; Scandurra, A. ; Raineri, V....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74 (1993) 1-2 - p. 105-108 , 1993

Link: https://doi.org/10.1016/..

14

Electron irradiation effects on power MOS transistors:

Frisina, F. ; Gombia, E. ; Chirco, P....
International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry. 35 (1990) 4-6 - p. 500-506 , 1990

Link: https://doi.org/10.1016/..

15

Advances in the use of GABAergic interneurons for the treat..:

Frisina, F ; Valetti, G ; Zuccarini, G..
volume:3. , 2019

Link: http://hdl.handle.net/11..