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Fronheiser, Jody
15  results:
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1

(Invited)Extending Advanced CMOS Scaling with SiGe Channel ..:

Carter, Rick J ; Sporer, Ryan ; McArdle, Timothy J...
ECS Transactions.  85 (2018)  6 - p. 3-10 , 2018
Link: https://doi.org/10.1149/..
 
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2

CMP Challenges for Advanced Technology Nodes beyond Si:

Zhang, John H ; Tsai, Stan ; Surisetty, Charan...
MRS Advances.  2 (2017)  51 - p. 2891-2902 , 2017
Link: https://doi.org/10.1557/..
 
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3

Implementation of Sub-Resolvable Features for Precise Elect..:

McMahon, J. Jay ; Yu, Liang Chun ; Fronheiser, Jody...
Materials Science Forum.  717-720 (2012)  - p. 797-800 , 2012
Link: https://doi.org/10.4028/..
 
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4

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs:

Yu, Liang Chun ; Fronheiser, Jody ; Tilak, Vinayak.
Materials Science Forum.  717-720 (2012)  - p. 793-796 , 2012
Link: https://doi.org/10.4028/..
 
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5

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability:

Fronheiser, Jody ; Chatterjee, Aveek ; Grossner, Ulrike...
Materials Science Forum.  679-680 (2011)  - p. 354-357 , 2011
Link: https://doi.org/10.4028/..
 
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6

Silicon carbide oxidation in the presence of cesium: Modeli..:

Chatterjee, Aveek ; Piao, Hong ; Matocha, Kevin...
Journal of Applied Physics.  108 (2010)  8 - p. , 2010
Link: https://doi.org/10.1063/..
 
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7

Multiscale Modeling and Analysis of the Nitridation Effect ..:

Chatterjee, Aveek ; Matocha, Kevin ; Tilak, Vinayak..
Materials Science Forum.  645-648 (2010)  - p. 479-482 , 2010
Link: https://doi.org/10.4028/..
 
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8

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors:

Cochrane, Corey J. ; Bittel, Brad C. ; Lenahan, Patrick M....
Materials Science Forum.  645-648 (2010)  - p. 527-530 , 2010
Link: https://doi.org/10.4028/..
 
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9

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20)..:

Naik, Harsh ; Tang, K. ; Marron, T...
Materials Science Forum.  615-617 (2009)  - p. 785-788 , 2009
Link: https://doi.org/10.4028/..
 
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10

4H-SiC Oxide Characterization with SIMS Using a 13C Tracer:

Fronheiser, Jody ; Matocha, Kevin ; Tilak, Vinayak.
Materials Science Forum.  615-617 (2009)  - p. 513-516 , 2009
Link: https://doi.org/10.4028/..
 
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11

Influence of Defects in 4H-SiC Avalanche Photodiodes on Gei..:

Vert, Alexey V. ; Soloviev, Stanislav I. ; Fronheiser, Jody.
Materials Science Forum.  615-617 (2009)  - p. 877-880 , 2009
Link: https://doi.org/10.4028/..
 
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12

6H and 4H-SiC Avalanche Photodiodes:

Rowland, L.B. ; Wyatt, Jeffery L. ; Fronheiser, Jody...
Materials Science Forum.  615-617 (2009)  - p. 869-872 , 2009
Link: https://doi.org/10.4028/..
 
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13

Solar-Blind 4H-SiC Avalanche Photodiodes:

Soloviev, Stanislav I. ; Vert, Alexey V. ; Fronheiser, Jody.
Materials Science Forum.  615-617 (2009)  - p. 873-876 , 2009
Link: https://doi.org/10.4028/..
 
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14

Positive Temperature Coefficient of Avalanche Breakdown Obs..:

Soloviev, Stanislav I. ; Vert, Alexey V. ; Fronheiser, Jody.
Materials Science Forum.  615-617 (2009)  - p. 865-868 , 2009
Link: https://doi.org/10.4028/..
 
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15

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices:

Rowland, L.B. ; Dunne, Greg ; Fronheiser, Jody.
Materials Science Forum.  556-557 (2007)  - p. 141-144 , 2007
Link: https://doi.org/10.4028/..
 
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