E-LIB Suche - Ergebnisse für: Fukui, Munetoshi

1

Reducing turn-Off loss by suppressing Back-Side parasitic n..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Kobayashi, Yusuke ; Fukui, Munetoshi ; Matsudai, Tomoko... - p. 33-36 , 2024

2

Robust reverse bias safe operating area and improved electr..:

Zhou, Xiang ; Fukui, Munetoshi ; Takeuchi, Kiyoshi...
Japanese Journal of Applied Physics. 63 (2024) 2 - p. 02SP57 , 2024

Link: https://doi.org/10.35848..

3

Superior Turn-Off dV/dt Controllability From Suppression of..:

Zhou, Xiang ; Fukui, Munetoshi ; Takeuchi, Kiyoshi..
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 433-439 , 2024

Link: https://doi.org/10.1109/..

4

Single-Back and Double-Front Gate-Controlled IGBT for Achie..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Kobayashi, Yusuke ; Fukui, Munetoshi ; Matsudai, Tomoko... - p. 207-210 , 2023

Link: https://doi.org/10.1109/..

5

Suppressed Dynamic Avalanche and Enhanced Turn-off dV/dt Co..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Zhou, Xiang ; Fukui, Munetoshi ; Takeuchi, Kiyoshi.. - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

6

Origin of carrier lifetime degradation in floating-zone sil..:

Yokogawa, Ryo ; Kobayashi, Hiroto ; Numasawa, Yohichiroh...
Japanese Journal of Applied Physics. 59 (2020) 11 - p. 115503 , 2020

Link: https://doi.org/10.35848..

7

Impact of structural parameter scaling on on-state voltage ..:

Saraya, Takuya ; Itou, Kazuo ; Takakura, Toshihiko...
Japanese Journal of Applied Physics. 59 (2020) SG - p. SGGD18 , 2020

Link: https://doi.org/10.35848..

8

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Tsukuda, Masanori ; Sudo, Masaki ; Hasegawa, Kazunori... - p. 339-342 , 2019

Link: https://doi.org/10.1109/..

9

Evaluations of minority carrier lifetime in floating zone S..:

Kobayashi, Hiroto ; Yokogawa, Ryo ; Kinoshita, Kosuke...
Japanese Journal of Applied Physics. 58 (2019) SB - p. SBBD07 , 2019

Link: https://doi.org/10.7567/..

10

Impact of three-dimensional current flow on accurate TCAD s..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Watanabe, Masahiro ; Shigyo, Naoyuki ; Hoshii, Takuya... - p. 311-314 , 2019

Link: https://doi.org/10.1109/..

11

3300V Scaled IGBTs Driven by 5V Gate Voltage:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Saraya, Takuya ; Itou, Kazuo ; Takakura, Toshihiko... - p. 43-46 , 2019

Link: https://doi.org/10.1109/..

12

Cross Section and Plan View STEM Analysis on Identical Conv..:

Sato, Takahiro ; Orai, Yoshihisa ; Isshiki, Toshiyuki..
Materials Science Forum. 858 (2016) - p. 397-400 , 2016

Link: https://doi.org/10.4028/..

13

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Dire..:

Sato, Takahiro ; Ohtsu, Yoshihiro ; Orai, Yoshihisa..
Materials Science Forum. 821-823 (2015) - p. 303-306 , 2015

Link: https://doi.org/10.4028/..

14

Relations between Surface Morphology and Dislocations of Si..:

Orai, Yoshihisa ; Watanabe, Syunya ; Sato, Takahiro..
Materials Science Forum. 821-823 (2015) - p. 311-314 , 2015

Link: https://doi.org/10.4028/..

15

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Et..:

Sato, Takahiro ; Suzuki, Yuya ; Ito, Hiroyuki..
Materials Science Forum. 778-780 (2014) - p. 358-361 , 2014

Link: https://doi.org/10.4028/..