E-LIB Suche - Ergebnisse für: Fursenko, O.

1

Processing and integration of graphene in a 200 mm wafer Si..:

Lisker, M. ; Lukosius, M. ; Fraschke, M....
Microelectronic Engineering. 205 (2019) - p. 44-52 , 2019

Link: https://doi.org/10.1016/..

2

Dynamic SIMS, spectroscopic ellipsometry and x-ray diffract..:

Bärwolf, F ; Fursenko, O ; Zaumseil, P.
Semiconductor Science and Technology. 34 (2018) 1 - p. 014005 , 2018

Link: https://doi.org/10.1088/..

3

Graphene Synthesis and Processing on Ge Substrates:

Lupina, G. ; Lukosius, M. ; Lippert, G....
ECS Journal of Solid State Science and Technology. 6 (2017) 5 - p. M55-M59 , 2017

Link: https://doi.org/10.1149/..

4

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Subs..:

Lukosius, M. ; Dabrowski, J. ; Kitzmann, J....
ACS Applied Materials & Interfaces. 8 (2016) 49 - p. 33786-33793 , 2016

Link: https://doi.org/10.1021/..

5

Through silicon via profile metrology of Bosch etching proc..:

Fursenko, O. ; Bauer, J. ; Marschmeyer, S..
Microelectronic Engineering. 139 (2015) - p. 70-75 , 2015

Link: https://doi.org/10.1016/..

6

Monolithically integrated 25Gbit/sec receiver for 1.55µm in..:

, In: OFC 2014,

Knoll, D. ; Lischke, S. ; Zimmermann, L.... - p. 1-3 , 2014

Link: https://doi.org/10.1364/..

7

In-line through silicon vias etching depths inspection by s..:

Fursenko, O. ; Bauer, J. ; Marschmeyer, S.
Microelectronic Engineering. 122 (2014) - p. 25-28 , 2014

Link: https://doi.org/10.1016/..

8

Characterization of Si nanowaveguide line edge roughness an..:

Fursenko, O. ; Bauer, J. ; Knopf, A....
Materials Science and Engineering: B. 177 (2012) 10 - p. 750-755 , 2012

Link: https://doi.org/10.1016/..

9

Nanostructured silicon for Ge nanoheteroepitaxy:

Bauer, J. ; Yamamoto, Y. ; Zaumseil, P....
Microelectronic Engineering. 97 (2012) - p. 169-172 , 2012

Link: https://doi.org/10.1016/..

10

Optical properties and band gap characterization of high di..:

Fursenko, O. ; Bauer, J. ; Lupina, G....
Thin Solid Films. 520 (2012) 14 - p. 4532-4535 , 2012

Link: https://doi.org/10.1016/..

11

Dielectric constant and leakage of BaZrO3 films:

Łupina, G. ; Dąbrowski, J. ; Dudek, P....
Applied Physics Letters. 94 (2009) 15 - p. , 2009

Link: https://doi.org/10.1063/..

12

Doping concentration control of SiGe layers by spectroscopi..:

Fursenko, O. ; Bauer, J. ; Zaumseil, P...
Thin Solid Films. 517 (2008) 1 - p. 259-261 , 2008

Link: https://doi.org/10.1016/..

13

SiGe BiCMOS Technology with 3.0 ps Gate Delay:

, In: 2007 IEEE International Electron Devices Meeting,

Rucker, H. ; Fursenko, O. ; Grabolla, T.... - p. None , 2007

Link: https://doi.org/10.1109/..

14

Spectroscopic ellipsometry for in-line process control of S..:

Fursenko, O. ; Bauer, J. ; Zaumseil, P....
Materials Science in Semiconductor Processing. 8 (2005) 1-3 - p. 273-278 , 2005

Link: https://doi.org/10.1016/..

15

Effects of various Co/TiN and Co/Ti layer stacks and the sa..:

Buschbaum, S. ; Fursenko, O. ; Bolze, D....
Microelectronic Engineering. 76 (2004) 1-4 - p. 311-317 , 2004

Link: https://doi.org/10.1016/..