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Gačević, Ž
36
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Online (36)
Mediatypes
Articles (Online) (25)
OpenAccess-fulltext (11)
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1
The effect of annealing treatment on the structural and opt..:
Yevdokymenko, Vladyslav Yu.
;
Dobrozhan, O.
;
Pshenychnyi, R.
...
Materials Science in Semiconductor Processing. 161 (2023) - p. 107472 , 2023
Link:
https://doi.org/10.1016/..
?
2
Growth interruption strategies for interface optimization i..:
Braza, V.
;
Ben, T.
;
Flores, S.
...
Applied Surface Science. 604 (2022) - p. 154596 , 2022
Link:
https://doi.org/10.1016/..
?
3
Unravelling the polarity of InN quantum dots using a modifi..:
Rajak, Piu
;
Islam, Mahabul
;
Jiménez, J. J.
...
Nanoscale. 11 (2019) 28 - p. 13632-13638 , 2019
Link:
https://doi.org/10.1039/..
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4
(S)TEM methods contributions to improve the fabrication of ..:
Jiménez, J.J.
;
Mánuel, J.M.
;
Aseev, P.
...
Journal of Alloys and Compounds. 783 (2019) - p. 697-708 , 2019
Link:
https://doi.org/10.1016/..
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5
Formation mechanisms of single-crystalline InN quantum dots..:
Aseev, P.
;
Gačević, Ž.
;
Mánuel, J.M.
...
Journal of Crystal Growth. 493 (2018) - p. 65-75 , 2018
Link:
https://doi.org/10.1016/..
?
6
Thin GaAsSb capping layers for improved performance of InAs..:
Utrilla, A.D.
;
Reyes, D.F.
;
Llorens, J.M.
...
Solar Energy Materials and Solar Cells. 159 (2017) - p. 282-289 , 2017
Link:
https://doi.org/10.1016/..
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7
Impact of alloyed capping layers on the performance of InAs..:
Utrilla, A.D.
;
Ulloa, J.M.
;
Gačević, Ž.
...
Solar Energy Materials and Solar Cells. 144 (2016) - p. 128-135 , 2016
Link:
https://doi.org/10.1016/..
?
8
Improving optical performance of GaN nanowires grown by sel..:
Aseev, P.
;
Gačević, Ž.
;
Torres-Pardo, A.
..
Applied Physics Letters. 108 (2016) 25 - p. , 2016
Link:
https://doi.org/10.1063/..
?
9
Comparative study of single InGaN layers grown on Si(111) a..:
Gómez, V.J.
;
Gačević, Ž.
;
Soto-Rodríguez, P.E.D.
...
Journal of Crystal Growth. 447 (2016) - p. 48-54 , 2016
Link:
https://doi.org/10.1016/..
?
10
A top-gate GaN nanowire metal–semiconductor field effect tr..:
Gačević, Ž.
;
López-Romero, D.
;
Juan Mangas, T.
.
Applied Physics Letters. 108 (2016) 3 - p. , 2016
Link:
https://doi.org/10.1063/..
?
11
Crystallographically uniform arrays of ordered (In)GaN nano..:
Gačević, Ž.
;
Bengoechea-Encabo, A.
;
Albert, S.
...
Journal of Applied Physics. 117 (2015) 3 - p. , 2015
Link:
https://doi.org/10.1063/..
?
12
Dynamic control of the optical emission from GaN/InGaN nano..:
Lazić, S.
;
Chernysheva, E.
;
Gačević, Ž.
...
AIP Advances. 5 (2015) 9 - p. 097217 , 2015
Link:
https://doi.org/10.1063/..
?
13
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowi..:
Chernysheva, E.
;
Gačević, Ž.
;
García-Lepetit, N.
...
EPL (Europhysics Letters). 111 (2015) 2 - p. 24001 , 2015
Link:
https://doi.org/10.1209/..
?
14
Analysis of InAl(Ga)N/GaN wet-etching by structural, morpho..:
Brazzini, T
;
Martin-Horcajo, S
;
Romero, M F
..
Semiconductor Science and Technology. 29 (2014) 7 - p. 075003 , 2014
Link:
https://doi.org/10.1088/..
?
15
Insight into high-reflectivity AlN/GaN Bragg reflectors wit..:
Gačević, Ž.
;
Eljarrat, A.
;
Peiró, F.
.
Journal of Applied Physics. 113 (2013) 18 - p. , 2013
Link:
https://doi.org/10.1063/..
1-15