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Gaillard, F
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1

A Methodology to Address RF Aging of 40nm CMOS PA Cells Und..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Divay, A. ; Dehos, C. ; Charlet, I.... - p. 4B.2-1-4B.2-6 , 2024
Link: https://doi.org/10.1109/..
 
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2

Target fishing reveals PfPYK-1 and PfRab6 as potential targ..:

Kieffer, C. ; Primas, N. ; Hutter, S....
Bioorganic & Medicinal Chemistry.  102 (2024)  - p. 117654 , 2024
Link: https://doi.org/10.1016/..
 
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3

Corrigendum to "TCAD simulations of FDSOI devices down to d..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics.  199 (2023)  - p. 108541 , 2023
Link: https://doi.org/10.1016/..
 
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4

Optimizing RFSOI Performance through a T-shaped Gate and Na..:

, In: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
Lucci, L. ; Cremer, S. ; Duriez, B.... - p. 61-64 , 2023
Link: https://doi.org/10.1109/..
 
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5

A novel fast calibration method for NVNAs based linearity s..:

, In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC),
dos Santos, J. A. Silva ; Reveyrand, T. ; Gaillard, F.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

A cost effective RF-SOI Drain Extended MOS transistor featu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Garros, X. ; Divay, A. ; Lacord, J.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

Corrigendum to "Modeling and simulations of FDSOI five-gate..:

Catapano, E. ; Aprà, A. ; Cassé, M....
Solid-State Electronics.  199 (2023)  - p. 108540 , 2023
Link: https://doi.org/10.1016/..
 
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8

3D sequential integration with Si CMOS stacked on 28nm indu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Mota-Frutuoso, T. ; Lapras, V. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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9

Alternative solutions considered by Enedis to reduce electr..:

, In: 27th International Conference on Electricity Distribution (CIRED 2023),
Coulibaly, M.-L. ; Gaillard, F. ; Hadbi, D... - p. None , 2023
Link: https://doi.org/10.1049/..
 
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10

Methodology for an efficient characterization flow of indus..:

, In: 2022 International Electron Devices Meeting (IEDM),
Contamin, L.C. ; Paz, B. Cardoso ; Diaz, B. Martinez... - p. 22.1.1-22.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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11

A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-S..:

, In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC),
Nyssens, L. ; Rack, M. ; Wane, S.... - p. 60-63 , 2022
Link: https://doi.org/10.23919..
 
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12

Modeling of 1D confinement in FD-SOI trigate nanowires at d..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics.  198 (2022)  - p. 108466 , 2022
Link: https://doi.org/10.1016/..
 
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13

Methodology for Active Junction Profile Extraction in thin ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Frutuoso, T. Mota ; Garros, X. ; Batude, P.... - p. 332-333 , 2022
Link: https://doi.org/10.1109/..
 
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14

FDSOI for cryoCMOS electronics: device characterization tow..:

, In: 2022 International Electron Devices Meeting (IEDM),
Casse, M. ; Paz, B. Cardoso ; Bergamaschi, F.... - p. 34.6.1-34.6.4 , 2022
Link: https://doi.org/10.1109/..
 
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15

Modeling and simulations of FDSOI five-gate qubit MOS devic..:

Catapano, E. ; Aprà, A. ; Cassé, M....
Solid-State Electronics.  193 (2022)  - p. 108291 , 2022
Link: https://doi.org/10.1016/..
 
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