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Gamiz, F.
250
results:
Search for persons
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Format
Online (250)
Mediatypes
Articles (Online) (177)
Bookchapter (Online) (4)
OpenAccess-fulltext (69)
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english (212)
spanish (5)
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?
1
3D-TCAD benchmark of two-gate dual-doped Reconfigurable FET..:
Navarro, C.
;
Donetti, L.
;
Padilla, J.L.
...
Solid-State Electronics. 200 (2023) - p. 108577 , 2023
Link:
https://doi.org/10.1016/..
?
2
Experimental analysis of variability in WS2-based devices f..:
Vatalaro, M.
;
Neill, H.
;
Gity, F.
...
Solid-State Electronics. 207 (2023) - p. 108701 , 2023
Link:
https://doi.org/10.1016/..
?
3
DFT-based layered dielectric model of few-layer MoS2:
Donetti, L.
;
Navarro, C.
;
Marquez, C.
...
Solid-State Electronics. 194 (2022) - p. 108346 , 2022
Link:
https://doi.org/10.1016/..
?
4
Performance of FDSOI double-gate dual-doped reconfigurable ..:
Navarro, C.
;
Donetti, L.
;
Padilla, J.L
...
Solid-State Electronics. 194 (2022) - p. 108336 , 2022
Link:
https://doi.org/10.1016/..
?
5
Towards a DFT-based layered model for TCAD simulations of M..:
Donetti, L.
;
Marquez, C.
;
Navarro, C.
...
Solid-State Electronics. 197 (2022) - p. 108437 , 2022
Link:
https://doi.org/10.1016/..
?
6
Memory Operation of Z²-FET Without Selector at High Tempera..:
Kwon, S.
;
Navarro, C.
;
Gamiz, F.
...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 658-662 , 2021
Link:
https://doi.org/10.1109/..
?
7
Investigation of thin gate-stack Z2-FET devices as capacito..:
Navarro, S.
;
Marquez, C.
;
Lee, K.H.
...
Solid-State Electronics. 159 (2019) - p. 12-18 , 2019
Link:
https://doi.org/10.1016/..
?
8
A thorough study of Si nanowire FETs with 3D Multi-Subband ..:
Donetti, L.
;
Sampedro, C.
;
Ruiz, F.G.
..
Solid-State Electronics. 159 (2019) - p. 19-25 , 2019
Link:
https://doi.org/10.1016/..
?
9
TCAD Analysis of III-V capacitor-less A2RAM cells:
, In:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
,
Navarro, Carlos
;
Navarro, Santiago
;
Marquez, Carlos
. - p. 1-4 , 2019
Link:
https://doi.org/10.1109/..
?
10
Mechanical and thermal properties of graphene modified asph..:
Moreno-Navarro, F.
;
Sol-Sánchez, M.
;
Gámiz, F.
.
Construction and Building Materials. 180 (2018) - p. 265-274 , 2018
Link:
https://doi.org/10.1016/..
?
11
Multi-Subband Ensemble Monte Carlo simulations of scaled GA..:
Donetti, L.
;
Sampedro, C.
;
Ruiz, F.G.
..
Solid-State Electronics. 143 (2018) - p. 49-55 , 2018
Link:
https://doi.org/10.1016/..
?
12
Confinement-induced InAs/GaSb heterojunction electron–hole ..:
Padilla, J. L.
;
Medina-Bailon, C.
;
Alper, C.
..
Applied Physics Letters. 112 (2018) 18 - p. , 2018
Link:
https://doi.org/10.1063/..
?
13
A review of the Z 2 -FET 1T-DRAM memory: Operation mechanis..:
Cristoloveanu, S.
;
Lee, K.H.
;
Parihar, M.S.
...
Solid-State Electronics. 143 (2018) - p. 10-19 , 2018
Link:
https://doi.org/10.1016/..
?
14
Electrostatic performance of InSb, GaSb, Si and Ge p-channe..:
Martinez-Blanque, C
;
Marin, E G
;
Toral, A
...
Journal of Physics D: Applied Physics. 50 (2017) 49 - p. 495106 , 2017
Link:
https://doi.org/10.1088/..
?
15
Ultra-low power 1T-DRAM in FDSOI technology:
El Dirani, H.
;
Lee, K.H.
;
Parihar, M.S.
...
Microelectronic Engineering. 178 (2017) - p. 245-249 , 2017
Link:
https://doi.org/10.1016/..
1-15