Garbin, Daniele
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4

Comprehensive Performance and Reliability Assessment of Se-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Ravsher, Taras ; Degraeve, Robin ; Garbin, Daniele... - p. 7A.5-1-7A.5-9 , 2024
 
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5

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Thresh..:

Ravsher, Taras ; Garbin, Daniele ; Fantini, Andrea...
IEEE Transactions on Electron Devices.  70 (2023)  5 - p. 2276-2281 , 2023
 
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7

Polarity‐Induced Threshold Voltage Shift in Ovonic Threshol..:

Ravsher, Taras ; Garbin, Daniele ; Fantini, Andrea...
physica status solidi (RRL) – Rapid Research Letters.  17 (2023)  8 - p. , 2023
 
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8

New Insights of the Switching Process in GeAsTe Ovonic Thre..:

Hu, Zeyu ; Zhang, Weidong ; Degraeve, Robin...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 812-818 , 2023
 
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11

Ovonic Threshold Switch Chalcogenides: Connecting the First..:

Clima, Sergiu ; Ravsher, Taras ; Garbin, Daniele...
ACS Applied Electronic Materials.  5 (2022)  1 - p. 461-469 , 2022
 
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13

Impact of Relaxation on the Performance of GeSe True Random..:

Zhou, Xue ; Hu, Zeyu ; Chai, Zheng...
IEEE Electron Device Letters.  43 (2022)  7 - p. 1061-1064 , 2022
 
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14

Exploration of Scandium Doping in SbTe for Phase Change Mem..:

Barci, Marinela ; Leonelli, Daniele ; Zhou, Xue...
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6106-6112 , 2022
 
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15

Enhanced performance and low-power capability of SiGeAsSe-G..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ravsher, Taras ; Garbin, Daniele ; Fantini, Andrea... - p. 312-313 , 2022
 
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