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Gassenq, A.
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1

Infrared micro-emitters made by pulsed laser deposition lif..:

Gassenq, A. ; Guyot, Y. ; Cleyet-Merle, E....
Applied Physics A.  129 (2023)  4 - p. , 2023
Link: https://doi.org/10.1007/..
 
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2

Confined Tamm plasmon light-emitting diodes:

Symonds, C. ; Toanen, V. ; Gassenq, A....
Applied Physics Letters.  122 (2023)  26 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

Growth and structural properties of step-graded, high Sn co..:

Aubin, J ; Hartmann, J M ; Gassenq, A...
Semiconductor Science and Technology.  32 (2017)  9 - p. 094006 , 2017
Link: https://doi.org/10.1088/..
 
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4

Raman-strain relations in highly strained Ge: Uniaxial ⟨100..:

Gassenq, A. ; Tardif, S. ; Guilloy, K....
Journal of Applied Physics.  121 (2017)  5 - p. , 2017
Link: https://doi.org/10.1063/..
 
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5

Germanium based photonic components toward a full silicon/g..:

Reboud, V. ; Gassenq, A. ; Hartmann, J.M....
Progress in Crystal Growth and Characterization of Materials.  63 (2017)  2 - p. 1-24 , 2017
Link: https://doi.org/10.1016/..
 
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6

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1..:

Reboud, V. ; Gassenq, A. ; Pauc, N....
Applied Physics Letters.  111 (2017)  9 - p. , 2017
Link: https://doi.org/10.1063/..
 
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7

Impact of thickness on the structural properties of high ti..:

Aubin, J. ; Hartmann, J.M. ; Gassenq, A....
Journal of Crystal Growth.  473 (2017)  - p. 20-27 , 2017
Link: https://doi.org/10.1016/..
 
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8

Raman spectral shift versus strain and composition in GeSn ..:

Gassenq, A. ; Milord, L. ; Aubin, J....
Applied Physics Letters.  110 (2017)  11 - p. , 2017
Link: https://doi.org/10.1063/..
 
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9

Highly strained Ge micro-blocks bonded on Si platform for m..:

Gassenq, A. ; Guilloy, K. ; Pauc, N....
MRS Communications.  7 (2017)  3 - p. 691-694 , 2017
Link: https://doi.org/10.1557/..
 
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10

Study of the light emission in Ge layers and strained membr..:

Gassenq, A. ; Guilloy, K. ; Pauc, N....
Thin Solid Films.  613 (2016)  - p. 64-67 , 2016
Link: https://doi.org/10.1016/..
 
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11

Accurate strain measurements in highly strained Ge microbri..:

Gassenq, A. ; Tardif, S. ; Guilloy, K....
Applied Physics Letters.  108 (2016)  24 - p. , 2016
Link: https://doi.org/10.1063/..
 
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12

Gamma bandgap determination in pseudomorphic GeSn layers gr..:

Gassenq, A. ; Milord, L. ; Aubin, J....
Applied Physics Letters.  109 (2016)  24 - p. , 2016
Link: https://doi.org/10.1063/..
 
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13

1.9% bi-axial tensile strain in thick germanium suspended m..:

Gassenq, A. ; Guilloy, K. ; Osvaldo Dias, G....
Applied Physics Letters.  107 (2015)  19 - p. , 2015
Link: https://doi.org/10.1063/..
 
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14

Silicon-on-insulator spectrometers with integrated GaInAsSb..:

Ryckeboer, E. ; Gassenq, A. ; Muneeb, M....
Optics Express.  21 (2013)  5 - p. 6101 , 2013
Link: https://doi.org/10.1364/..
 
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15

GeSn/Ge heterostructure short-wave infrared photodetectors ..:

Gassenq, A. ; Gencarelli, F. ; Van Campenhout, J....
Optics Express.  20 (2012)  25 - p. 27297 , 2012
Link: https://doi.org/10.1364/..
 
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