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Gassilloud, R
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1

A Review of Low Temperature Process Modules Leading Up to t..:

Fenouillet-Beranger, C. ; Brunet, L. ; Batude, P....
IEEE Transactions on Electron Devices.  68 (2021)  7 - p. 3142-3148 , 2021
Link: https://doi.org/10.1109/..
 
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2

Low temperature high voltage analog devices in a 3D sequent..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Cavalcante, C. ; Garros, X. ; Batude, P.... - p. 155-156 , 2020
Link: https://doi.org/10.1109/..
 
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3

First demonstration of low temperature $(\leq 500^{\circ}\m..:

, In: 2020 IEEE Symposium on VLSI Technology,
Fenouillet-Beranger, C. ; Brunet, L. ; Batude, P.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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4

Corrigendum to "X-ray reflectometry and grazing-incidence X..:

Nolot, E. ; Caby, B. ; Gassilloud, R...
Spectrochimica Acta Part B: Atomic Spectroscopy.  160 (2019)  - p. 105691 , 2019
Link: https://doi.org/10.1016/..
 
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5

Topographically selective deposition:

Chaker, A. ; Vallee, C. ; Pesce, V....
Applied Physics Letters.  114 (2019)  4 - p. , 2019
Link: https://doi.org/10.1063/..
 
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6

Chemistry of resistivity changes in TiTe/Al2O3 conductive-b..:

Kazar Mendes, M. ; Martinez, E. ; Ablett, J. M....
Scientific Reports.  8 (2018)  1 - p. , 2018
Link: https://doi.org/10.1038/..
 
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7

Forming mechanism of Te-based conductive-bridge memories:

Mendes, M. Kazar ; Martinez, E. ; Marty, A....
Applied Surface Science.  432 (2018)  - p. 34-40 , 2018
Link: https://doi.org/10.1016/..
 
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8

X-ray reflectometry and grazing-incidence X-ray fluorescenc..:

Nolot, E. ; Caby, B. ; Gassilloud, R...
Spectrochimica Acta Part B: Atomic Spectroscopy.  149 (2018)  - p. 71-75 , 2018
Link: https://doi.org/10.1016/..
 
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9

Dense N over CMOS 6T SRAM cells using 3D Sequential Integra..:

, In: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Lu, C.-M V. ; Fenouillet-Beranger, C. ; Brocard, M.... - p. 1-2 , 2017
Link: https://doi.org/10.1109/..
 
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10

Depth profiling investigation by pARXPS and MEIS of advance..:

Fauquier, L. ; Pelissier, B. ; Jalabert, D....
Microelectronic Engineering.  169 (2017)  - p. 24-28 , 2017
Link: https://doi.org/10.1016/..
 
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11

Backside versus frontside advanced chemical analysis of hig..:

Martinez, E. ; Saidi, B. ; Veillerot, M....
Journal of Electron Spectroscopy and Related Phenomena.  203 (2015)  - p. 1-7 , 2015
Link: https://doi.org/10.1016/..
 
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12

PECVD RF versus dual frequency: an investigation of plasma ..:

Piallat, F ; Vallée, C ; Gassilloud, R...
Journal of Physics D: Applied Physics.  47 (2014)  18 - p. 185201 , 2014
Link: https://doi.org/10.1088/..
 
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13

A study of nitrogen behavior in the formation of Ta/TaN and..:

Gassilloud, R. ; Maunoury, C. ; Leroux, C....
Applied Physics Letters.  104 (2014)  14 - p. , 2014
Link: https://doi.org/10.1063/..
 
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14

Gate-last integration on planar FDSOI for low-VTp and low-E..:

Morvan, S. ; Andrieu, F. ; Leroux, C....
Microelectronic Engineering.  109 (2013)  - p. 306-309 , 2013
Link: https://doi.org/10.1016/..
 
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15

SiON and SiO2/HfSiON gate oxides time dependent dielectric ..:

Delcroix, P. ; Blonkowski, S. ; Kogelschatz, M....
Microelectronic Engineering.  88 (2011)  7 - p. 1376-1379 , 2011
Link: https://doi.org/10.1016/..
 
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