Geissberger, R.
16  results:
Search for persons X
?
2

Rheological modelling of thermoset composite processing:

Geissberger, R. ; Maldonado, J. ; Bahamonde, N....
Composites Part B: Engineering.  124 (2017)  - p. 182-189 , 2017
 
?
3

Experimental and numerical investigation of ply size effect..:

A. Keller ; R. Geissberger ; J. Studer...
http://www.sciencedirect.com/science/article/pii/S0264127520308388.  , 2021
 
?
 
?
5

Default mode network deactivation during emotion processing..:

Spies, M ; Kraus, C ; Geissberger, N...
Translational Psychiatry.  7 (2017)  1 - p. e1008-e1008 , 2017
 
?
6

Reduced gray matter in subcortical brain regions in MDD: pr..:

Vanicek, T. ; Seiger, R. ; Auer, B....
European Neuropsychopharmacology.  27 (2017)  - p. S719-S720 , 2017
 
?
7

Raman-scattering studies of implantation-amorphized gallium..:

Zallen, R. ; Holtz, M. ; Geissberger, A.E....
Journal of Non-Crystalline Solids.  114 (1989)  - p. 795-797 , 1989
 
?
8

High Speed, Low-Power GaAs Programmable Counters for Synthe..:

, In: 1987 IEEE GaAs IC Symposium Technical Digest,
Singh, H. P. ; Sadler, R. A. ; Geissberger, A. E... - p. 269-272 , 1987
 
?
9

A Comparative Study of GaAs Logic Families using Universal ..:

, In: 1986 IEEE GaAs IC Symposium Technical Digest,
Singh, H. P. ; Sadler, R. A. ; Geissberger, A. E.... - p. 011-014 , 1986
 
?
10

On the thermal history of Libyan Desert glass:

Galeener, F.L. ; Geissberger, A.E. ; Weeks, R.A.
Journal of Non-Crystalline Solids.  67 (1984)  1-3 - p. 629-636 , 1984
 
?
 
?
13

Default mode network deactivation during emotion processing..:

Spies, M ; Kraus, C ; Geissberger, N...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5545730/.  , 2017
 
?
14

Remission from depression and tms over left DLPFC share the..:

M. Tik ; M. Woletz ; G. Kranz...
http://www.sciencedirect.com/science/article/pii/S1935861X18308325.  , 2019
 
?
15

Raman_scattering studies of silicon_implanted gallium arsen..:

Holtz, Mark ; Zallen, Richard H ; Geissberger, Art E.
Holtz, M., Zallen, R., Geissberger, A. E., Sadler, R. A. (1986). Raman_scattering studies of silicon_implanted gallium arsenide: The role of amorphicity. Journal of Applied Physics, 59(6), 1946-1951. doi:10.1063/1.336423.  , 1986
 
1-15