E-LIB Suche - Ergebnisse für: Ghandi, Reza

1

Demonstration of 3.5kV SiC Deep-Implanted Superjunction Did..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Ghandi, Reza ; Hitchcock, Collin ; Kennerly, Stacey.. - p. 13-15 , 2023

Link: https://doi.org/10.1109/..

2

Analysis of Strain in Ion Implanted 4H-SiC by Fringes Obser..:

Chen, Ze Yu ; Liu, Yafei ; Peng, Hong Yu...
Defect and Diffusion Forum. 426 (2023) - p. 51-56 , 2023

Link: https://doi.org/10.4028/..

3

Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN ..:

Ghandi, Reza ; Hitchcock, Collin ; Kennerly, Stacey
Materials Science Forum. 1062 (2022) - p. 477-481 , 2022

Link: https://doi.org/10.4028/..

4

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dos..:

Hitchcock, Collin ; Ghandi, Reza ; Deeb, Peter...
Materials Science Forum. 1062 (2022) - p. 422-426 , 2022

Link: https://doi.org/10.4028/..

5

Effect of Annealing Conditions on Recovery of Lattice Damag..:

Chen, Zeyu ; Liu, Yafei ; Peng, Hongyu...
ECS Journal of Solid State Science and Technology. 11 (2022) 6 - p. 065003 , 2022

Link: https://doi.org/10.1149/..

6

Investigation of Lattice Strain in High Energy Implanted 4H..:

Chen, Ze Yu ; Peng, Hong Yu ; Liu, Yafei...
Materials Science Forum. 1062 (2022) - p. 361-365 , 2022

Link: https://doi.org/10.4028/..

7

(Invited) Medium-Voltage SiC Devices for Next Generation of..:

Ghandi, Reza ; Hitchcock, Collin ; Kennerly, Stacey
ECS Transactions. 104 (2021) 7 - p. 67-73 , 2021

Link: https://doi.org/10.1149/..

8

A Subcircuit SPICE Model for SiC Charge-Balance Schottky Di..:

Hitchcock, Collin W. ; Zhou, Xiang ; Pandey, Gyanesh...
Materials Science Forum. 1004 (2020) - p. 945-952 , 2020

Link: https://doi.org/10.4028/..

9

Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Ba..:

Zhou, Xiang ; Hitchcock, Collin W. ; Ghandi, Reza..
Materials Science Forum. 1004 (2020) - p. 939-944 , 2020

Link: https://doi.org/10.4028/..

10

4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resista..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Ghandi, Reza ; Bolotnikov, Alexander ; Kennerly, Stacey... - p. 126-129 , 2020

Link: https://doi.org/10.1109/..

11

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedne..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza..
Materials Science Forum. 963 (2019) - p. 801-804 , 2019

Link: https://doi.org/10.4028/..

12

SiC Charge-Balanced Devices Offering Breakthrough Performan..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza...
Materials Science Forum. 963 (2019) - p. 655-659 , 2019

Link: https://doi.org/10.4028/..

13

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Sc..:

Zhou, Xiang ; Pandey, Gyanesh ; Ghandi, Reza...
Materials Science Forum. 963 (2019) - p. 516-519 , 2019

Link: https://doi.org/10.4028/..

14

3kV SiC Charge-Balanced Diodes Breaking Unipolar Limit:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Ghandi, Reza ; Bolotnikov, Alexander ; Lilienfeld, David.. - p. 179-182 , 2019

Link: https://doi.org/10.1109/..

15

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Imp..:

Ghandi, Reza ; Losee, Peter ; Bolotnikov, Alexander.
Materials Science Forum. 924 (2018) - p. 573-576 , 2018

Link: https://doi.org/10.4028/..