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Ghenzi, Nestor
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1

Multiphase Reset Induced Reliable Dual-Mode Resistance Swit..:

Shin, Dong Hoon ; Park, Hyungjun ; Ghenzi, Néstor...
ACS Applied Materials & Interfaces.  16 (2024)  13 - p. 16462-16473 , 2024
Link: https://doi.org/10.1021/..
 
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2

Memristors with Tunable Volatility for Reconfigurable Neuro..:

Woo, Kyung Seok ; Park, Hyungjun ; Ghenzi, Nestor...
ACS Nano.  , 2024
Link: https://doi.org/10.1021/..
 
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3

Heterogeneous reservoir computing in second-order Ta2O5/HfO..:

Ghenzi, Nestor ; Park, Tae Won ; Kim, Seung Soo...
Nanoscale Horizons.  9 (2024)  3 - p. 427-437 , 2024
Link: https://doi.org/10.1039/..
 
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4

Parallel Density‐Based Spatial Clustering with Dual‐Functio..:

Cheong, Sunwoo ; Shin, Dong Hoon ; Lee, Soo Hyung...
Advanced Functional Materials.  34 (2023)  8 - p. , 2023
Link: https://doi.org/10.1002/..
 
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5

A compact model for binary oxides-based memristive interfac..:

Ghenzi, Néstor ; Sánchez, María José ; Levy, Pablo
Journal of Physics D: Applied Physics.  46 (2013)  41 - p. 415101 , 2013
Link: https://doi.org/10.1088/..
 
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6

Bipolar resistive switching on TiO2/Au by conducting Atomic..:

Linares Moreau, Mercedes ; Barella, Mariano ; López Mir, Laura...
#PLACEHOLDER_PARENT_METADATA_VALUE#.  , 2019
Link: http://hdl.handle.net/10..
 
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7

Tailoring conductive filaments by electroforming polarity i..:

Ghenzi, Néstor ; Sánchez, María José ; Rubi, Diego...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4875559.  ,
Link: http://hdl.handle.net/11..
 
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8

Building memristive and radiation hardness TiO2-based junct..:

Ghenzi, Néstor ; Rubi, Diego ; Mangano, E...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2013.11.013.  ,
Link: http://hdl.handle.net/11..
 
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9

Tuning the resistive switching properties of TiO2-x films:

Ghenzi, Néstor ; Rozenberg, M.J ; Llopis, R...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4916516.  ,
Link: http://hdl.handle.net/11..
 
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10

Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin fi..:

Alposta, Ignacio ; Kalstein, Ariel ; Ghenzi, Néstor...
info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6566117/.  ,
Link: http://hdl.handle.net/11..
 
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11

Manganite based memristors: Influence of the electroforming..:

Rubi, Diego ; Kalstein, Ariel ; Roman Acevedo, Wilson Stibens...
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609015002643.  ,
Link: http://hdl.handle.net/11..
 
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12

Modeling of the Hysteretic I-V Characteristics of TiO2-Base..:

Blasco, Juli ; Ghenzi, Néstor ; Suãé, Jordi..
info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6717179/.  ,
Link: http://hdl.handle.net/11..
 
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13

Two resistive switching regimes in thin film manganite memo..:

Rubi, Diego ; Tesler, Federico Ariel ; Alposta, I...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4826484.  ,
Link: http://hdl.handle.net/11..
 
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14

Caracterización eléctrica y modelado de memorias no volátil..:

Ghenzi, Néstor
info:eu-repo/semantics/reference/url/http://www.tandar.cnea.gov.ar/~ghenzi/tesis_ghenzi_v231113.pdf.  ,
Link: http://hdl.handle.net/11..
 
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15

A compact model for binary oxides-based memristive interfac..:

Ghenzi, Néstor ; Sánchez, María José ; Levy, Pablo Eduardo
info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/46/41/415101.  ,
Link: http://hdl.handle.net/11..
 
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