E-LIB Suche - Ergebnisse für: Ghibaudo, G.

1

New insights into low frequency noise (LFN) sources analysi..:

Kom Kammeugne, R. ; Theodorou, C. ; Leroux, C....
Solid-State Electronics. 200 (2023) - p. 108555 , 2023

Link: https://doi.org/10.1016/..

2

Corrigendum to "Modeling and simulations of FDSOI five-gate..:

Catapano, E. ; Aprà, A. ; Cassé, M....
Solid-State Electronics. 199 (2023) - p. 108540 , 2023

Link: https://doi.org/10.1016/..

3

Experimental Study of Self-Heating Effect in InGaAs HEMTs f..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Di Santa Maria, F. Serra ; Balestra, F. ; Theodorou, C.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

4

On the Zero Temperature Coefficient in Cryogenic FD-SOI MOS..:

Catapano, E. ; Frutuoso, T. Mota ; Cassé, M..
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 845-849 , 2023

Link: https://doi.org/10.1109/..

5

Cryogenic MOSFET Subthreshold Current: From Resistive Netwo..:

Catapano, E. ; Cassé, M. ; Ghibaudo, G.
IEEE Transactions on Electron Devices. 70 (2023) 8 - p. 4049-4054 , 2023

Link: https://doi.org/10.1109/..

6

Corrigendum to "TCAD simulations of FDSOI devices down to d..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics. 199 (2023) - p. 108541 , 2023

Link: https://doi.org/10.1016/..

7

Physica status solidi

Volume 107, Number 1: May 16 Physica status solidi ; Volume 107, Number 1, A

Abe, H ; Al-Saleh, K . A ; Alameda, J. M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

8

Physica status solidi

Volume 99, Number 2: February 16 ; PSSA-B Physica status solidi ; Volume 99, Number 2, A

Abdullaev, A. B ; Aboelfotoh, M. O ; Abrikosov, N. Kh... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

9

Modeling of 1D confinement in FD-SOI trigate nanowires at d..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics. 198 (2022) - p. 108466 , 2022

Link: https://doi.org/10.1016/..

10

Modelling of self-heating effect in FDSOI and bulk MOSFETs ..:

Ghibaudo, G. ; Cassé, M. ; di Santa Maria, F. Serra..
Solid-State Electronics. 192 (2022) - p. 108265 , 2022

Link: https://doi.org/10.1016/..

11

Detailed electrical characterization of 200 mm CMOS compati..:

Kim, Donghyun ; Theodorou, C. ; Chanuel, A....
Solid-State Electronics. 197 (2022) - p. 108448 , 2022

Link: https://doi.org/10.1016/..

12

Modeling and simulations of FDSOI five-gate qubit MOS devic..:

Catapano, E. ; Aprà, A. ; Cassé, M....
Solid-State Electronics. 193 (2022) - p. 108291 , 2022

Link: https://doi.org/10.1016/..

13

Effect of doping on Al2O3/GaN MOS capacitance:

Rrustemi, B. ; Piotrowicz, C. ; Jaud, M-A....
Solid-State Electronics. 194 (2022) - p. 108356 , 2022

Link: https://doi.org/10.1016/..

14

FDSOI for cryoCMOS electronics: device characterization tow..:

, In: 2022 International Electron Devices Meeting (IEDM),

Casse, M. ; Paz, B. Cardoso ; Bergamaschi, F.... - p. 34.6.1-34.6.4 , 2022

Link: https://doi.org/10.1109/..

15

TCAD simulations of FDSOI devices down to deep cryogenic te..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics. 194 (2022) - p. 108319 , 2022

Link: https://doi.org/10.1016/..