E-LIB Suche - Ergebnisse für: Goldsman, Neil

1

Energy Dependence of Atmospheric Neutron-Induced Failures i..:

Akturk, Akin ; Wilkins, Richard ; Gunthoti, Kranti..
IEEE Transactions on Nuclear Science. 69 (2022) 4 - p. 900-907 , 2022

Link: https://doi.org/10.1109/..

2

Temperature Dependent Characterization-based Design Optimiz..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),

Dey, Saikat ; Mallik, Ayan ; Goldsman, Neil. - p. 2034-2039 , 2022

Link: https://doi.org/10.1109/..

3

The Science of Electronics in Extreme Electromagnetic Envir..:

, In: 2021 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM),

Hemmady, Sameer ; Schamiloglu, Edl ; Zarkesh-Ha, Payman... - p. 19-20 , 2021

Link: https://doi.org/10.23919..

4

Large Area Silicon Carbide Photodiode, and Monolithic Reado..:

Akturk, Akin ; Cusack, Brendan ; Goldsman, Neil
Materials Science Forum. 858 (2016) - p. 1023-1027 , 2016

Link: https://doi.org/10.4028/..

5

SPICE Modeling of Advanced Silicon Carbide High Temperature..:

Akturk, Akin ; Goldsman, Neil ; Ahyi, Ahayi...
Materials Science Forum. 858 (2016) - p. 1070-1073 , 2016

Link: https://doi.org/10.4028/..

6

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interfa..:

Ettisserry, Devanarayanan ; Goldsman, Neil ; Akturk, Akin.
Materials Science Forum. 858 (2016) - p. 465-468 , 2016

Link: https://doi.org/10.4028/..

7

Simulating the Influence of Mobile Ionic Oxide Charge on Si..:

Habersat, Daniel B. ; Goldsman, Neil ; Lelis, Aivars J.
Materials Science Forum. 821-823 (2015) - p. 697-700 , 2015

Link: https://doi.org/10.4028/..

8

A new process for the fabrication of planar antenna coupled..:

Yesilkoy, Filiz ; Mittal, Sunil ; Goldsman, Neil..
Microelectronic Engineering. 98 (2012) - p. 329-333 , 2012

Link: https://doi.org/10.1016/..

9

Silicon Carbide Ultraviolet Photodetector Modeling, Design ..:

Akturk, Akin ; Dandin, Marc ; Vert, Alexey V....
Materials Science Forum. 717-720 (2012) - p. 1199-1202 , 2012

Link: https://doi.org/10.4028/..

10

Two-Way Tunneling Model of Oxide Trap Charging and Discharg..:

Lelis, Aivars J. ; Habersat, Daniel B. ; Green, Ronald.
Materials Science Forum. 717-720 (2012) - p. 465-468 , 2012

Link: https://doi.org/10.4028/..

11

Total Near Interface Trap Density Calculation of 4H-SiC/SiO..:

Salemi, Shahrzad ; Akturk, Akin ; Potbhare, Siddharth..
Materials Science Forum. 717-720 (2012) - p. 457-460 , 2012

Link: https://doi.org/10.4028/..

12

Silicon Carbide-Silicon Dioxide Transition Layer Mobility:

Salemi, Shahrzad ; Akturk, Akin ; Potbhare, Siddharth..
Materials Science Forum. 717-720 (2012) - p. 449-452 , 2012

Link: https://doi.org/10.4028/..

13

(Invited) Modeling and Simulation of Silicon Carbide Power ..:

Goldsman, Neil ; Potbhare, Siddharth ; Akturk, Akin..
ECS Transactions. 41 (2011) 8 - p. 177-181 , 2011

Link: https://doi.org/10.1149/..

14

Investigation of the on‐chip MISM interconnects with the al..:

Yang, Bo ; Shao, Xi ; Goldsman, Neil..
Microwave and Optical Technology Letters. 53 (2011) 7 - p. 1582-1585 , 2011

Link: https://doi.org/10.1002/..

15

A novel high energy density flexible galvanic cell:

Peckerar, Martin ; Dilli, Zeynep ; Dornajafi, Mahsa...
Energy & Environmental Science. 4 (2011) 5 - p. 1807 , 2011

Link: https://doi.org/10.1039/..