Gotow, Takahiro
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2

Dependence of process damage on GaN channel thickness in Al..:

Ito, Yoshikaze ; Tamai, Seita ; Hoshi, Takuya..
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1048 , 2023
 
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5

Simulation of the Short Channel Effect in GaN HEMT with a C..:

MIYAMOTO, Yasuyuki ; GOTOW, Takahiro
IEICE Transactions on Electronics.  E103.C (2020)  6 - p. 304-307 , 2020
 
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