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Grünenpütt, Jan
5
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1
Transconductance Overshoot, a New Trap-Related Effect in Al..:
Zhan, Gao
;
Rampazzo, Fabiana
;
De Santi, Carlo
...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3005-3010 , 2023
Link:
https://doi.org/10.1109/..
?
2
Study of the influence of gate etching and passivation on c..:
Chiocchetta, F.
;
De Santi, C.
;
Rampazzo, F.
...
Microelectronics Reliability. 138 (2022) - p. 114735 , 2022
Link:
https://doi.org/10.1016/..
?
3
Impact of in situ NH3 pre-treatment of LPCVD SiN passivatio..:
Chen, Ding-Yuan
;
Persson, Axel R
;
Wen, Kai-Hsin
...
Semiconductor Science and Technology. 37 (2022) 3 - p. 035011 , 2022
Link:
https://doi.org/10.1088/..
?
4
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:
Gao, Zhan
;
Rampazzo, Fabiana
;
Meneghini, Matteo
...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021
Link:
https://doi.org/10.1016/..
?
5
Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with..:
Riedmüller, Sandra
;
Steinmann, Claudia
;
Grünenpütt, Jan
..
physica status solidi (a). 215 (2018) 8 - p. , 2018
Link:
https://doi.org/10.1002/..
1-5