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Grabolla, T.
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1

Author Correction: Influence of plasma treatment on SiO2/Si..:

Lukose, R. ; Lisker, M. ; Akhtar, F....
Scientific Reports.  11 (2021)  1 - p. , 2021
Link: https://doi.org/10.1038/..
 
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2

Influence of plasma treatment on SiO2/Si and Si3N4/Si subst..:

Lukose, R. ; Lisker, M. ; Akhtar, F....
Scientific Reports.  11 (2021)  1 - p. , 2021
Link: https://doi.org/10.1038/..
 
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3

Investigation of the Composition of the Si/SiO2Interface in..:

Kissinger, G. ; Schubert, M. A. ; Kot, D..
ECS Journal of Solid State Science and Technology.  6 (2017)  7 - p. N54-N63 , 2017
Link: https://doi.org/10.1149/..
 
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4

Monolithically integrated 25Gbit/sec receiver for 1.55µm in..:

, In: OFC 2014,
Knoll, D. ; Lischke, S. ; Zimmermann, L.... - p. 1-3 , 2014
Link: https://doi.org/10.1364/..
 
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5

SiGe BiCMOS Technology with 3.0 ps Gate Delay:

, In: 2007 IEEE International Electron Devices Meeting,
Rucker, H. ; Fursenko, O. ; Grabolla, T.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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6

Combination of optical measurement and precipitation theory..:

Kissinger, G. ; Müller, T. ; Sattler, A....
Materials Science in Semiconductor Processing.  9 (2006)  1-3 - p. 236-240 , 2006
Link: https://doi.org/10.1016/..
 
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7

Impact of carbon concentration on the interface density of ..:

Cuadras, A. ; Garrido, B. ; Morante, J. R....
Journal of Electronic Materials.  33 (2004)  9 - p. 1022-1027 , 2004
Link: https://doi.org/10.1007/..
 
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8

Circuit applications of high-performance SiGe:C HBTs integr..:

Winkler, W ; Borngräber, J ; Heinemann, B...
Applied Surface Science.  224 (2004)  1-4 - p. 297-305 , 2004
Link: https://doi.org/10.1016/..
 
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9

Ellipsometric Investigations on SiO2/Si: The Interface Resp..:

Jungk, G. ; Jungk, Ch. ; Grabolla, T.
physica status solidi (b).  215 (1999)  1 - p. 731-736 , 1999
Link: https://doi.org/10.1002/..
 
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10

Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Su..:

Kissinger, G. ; Grabolla, T. ; Morgenstern, G....
Journal of The Electrochemical Society.  146 (1999)  5 - p. 1971-1976 , 1999
Link: https://doi.org/10.1149/..
 
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11

Vertical p-MOSFETs with gate oxide deposition before select..:

Moers, J ; Klaes, D ; Tönnesmann, A...
Solid-State Electronics.  43 (1999)  3 - p. 529-535 , 1999
Link: https://doi.org/10.1016/..
 
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12

Low temperature-high pressure grown thin gate dielectrics f..:

Ramgopal Rao, V. ; Hansch, W. ; Mahapatra, S....
Microelectronic Engineering.  48 (1999)  1-4 - p. 223-226 , 1999
Link: https://doi.org/10.1016/..
 
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13

Selectively grown vertical Si MOS transistor with reduced o..:

Klaes, D ; Moers, J ; Tönnesmann, A...
Thin Solid Films.  336 (1998)  1-2 - p. 306-308 , 1998
Link: https://doi.org/10.1016/..
 
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14

Comparison of lateral and vertical Si-MOSFETs with ultra sh..:

Behammer, D. ; Zeuner, M. ; Hackbarth, T....
Thin Solid Films.  336 (1998)  1-2 - p. 313-318 , 1998
Link: https://doi.org/10.1016/..
 
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15

Optimization of the channel doping profile of vertical sub-..:

Kaesen, F ; Fink, C ; Anil, K.G...
Thin Solid Films.  336 (1998)  1-2 - p. 309-312 , 1998
Link: https://doi.org/10.1016/..
 
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