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Graham, Samuel L.
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1

MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset C..:

Athena, Fabia F. ; Nnaji, Moses ; Vaca, Diego...
Advanced Functional Materials.  34 (2024)  29 - p. , 2024
Link: https://doi.org/10.1002/..
 
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2

3-Component Composite Phase Change Material (PCM) for Elect..:

Randriambololona, Andoniaina M. ; Manepalli, Vivek ; McAfee, Rachel C....
IEEE Transactions on Components, Packaging and Manufacturing Technology.  , 2024
Link: https://doi.org/10.1109/..
 
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3

Enhanced Thermal Boundary Conductance across GaN/SiC Interf..:

Li, Ruiyang ; Hussain, Kamal ; Liao, Michael E....
ACS Applied Materials & Interfaces.  16 (2024)  6 - p. 8109-8118 , 2024
Link: https://doi.org/10.1021/..
 
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4

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heteroju..:

Masten, Hannah N. ; Lundh, James Spencer ; Feygelson, Tatyana I....
Applied Physics Letters.  124 (2024)  15 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamo..:

Malakoutian, Mohamadali ; Woo, Kelly ; Rich, Dennis...
Advanced Electronic Materials.  , 2024
Link: https://doi.org/10.1002/..
 
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6

Trade-off between Gradual Set and On/Off Ratio in HfOx-Base..:

Athena, Fabia F. ; West, Matthew P. ; Hah, Jinho..
ACS Applied Electronic Materials.  5 (2023)  6 - p. 3048-3058 , 2023
Link: https://doi.org/10.1021/..
 
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7

Thermal environment impact on HfOx RRAM operation: A nanosc..:

West, Matthew P. ; Pavlidis, Georges ; Montgomery, Robert H....
Journal of Applied Physics.  133 (2023)  18 - p. , 2023
Link: https://doi.org/10.1063/..
 
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8

Bias history impacts the analog resistance change of HfOx-b..:

West, Matthew P. ; Athena, Fabia F. ; Graham, Samuel.
Applied Physics Letters.  122 (2023)  6 - p. , 2023
Link: https://doi.org/10.1063/..
 
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9

Demand reduction and energy saving potential of thermal ene..:

Hirschey, Jason ; Li, Zhenning ; Gluesenkamp, Kyle R...
International Journal of Refrigeration.  148 (2023)  - p. 179-192 , 2023
Link: https://doi.org/10.1016/..
 
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10

Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Do..:

Kim, Samuel H. ; Shoemaker, Daniel ; Green, Andrew J....
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1628-1635 , 2023
Link: https://doi.org/10.1109/..
 
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11

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effe..:

, In: 2022 Device Research Conference (DRC),
Lundh, James Spencer ; Masten, Hannah N. ; Sasaki, Kohei... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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12

Interdiffusion and formation of intermetallic compounds in ..:

Imediegwu, Chidinma ; Graham, Samuel ; Pahinkar, Darshan G....
Microelectronics Reliability.  137 (2022)  - p. 114788 , 2022
Link: https://doi.org/10.1016/..
 
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13

Contributors:

, In: Thermal Management of Gallium Nitride Electronics,
Ahmad, Habib ; Aktas, Ozgur ; Ancona, M.G.... - p. xi-xiv , 2022
Link: https://doi.org/10.1016/..
 
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14

Correction to "Thermal Visualization of Buried Interfaces E..:

Cheng, Zhe ; Mu, Fengwen ; Ji, Xiaoyang...
ACS Applied Materials & Interfaces.  14 (2022)  19 - p. 22678-22678 , 2022
Link: https://doi.org/10.1021/..
 
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15

Device-level Transient Cooling of β-Ga2O3 MOSFETs:

, In: 2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm),
Kim, Samuel H. ; Spencer Lundh, James ; Shoemaker, Daniel... - p. 1-6 , 2022
Link: https://doi.org/10.1109/..
 
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