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Gregušová, D
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1

Local increase in compressive strain (GaN) in gate recessed..:

Mikulics, M ; Kordoš, P ; Gregušová, D...
Semiconductor Science and Technology.  36 (2021)  9 - p. 095040 , 2021
Link: https://doi.org/10.1088/..
 
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2

Conditioning nano-LEDs in arrays by laser-micro-annealing: ..:

Mikulics, M. ; Kordoš, P. ; Gregušová, D....
Applied Physics Letters.  118 (2021)  4 - p. , 2021
Link: https://doi.org/10.1063/..
 
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3

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science.  528 (2020)  - p. 146824 , 2020
Link: https://doi.org/10.1016/..
 
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4

Impact of oxide/barrier charge on threshold voltage instabi..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing.  91 (2019)  - p. 356-361 , 2019
Link: https://doi.org/10.1016/..
 
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5

Corrigendum to "Impact of oxide/barrier charge on threshold..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing.  93 (2019)  - p. 381 , 2019
Link: https://doi.org/10.1016/..
 
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6

Technology and application of in-situ AlOx layers on III-V ..:

Kúdela, R. ; Šoltýs, J. ; Kučera, M....
Applied Surface Science.  461 (2018)  - p. 33-38 , 2018
Link: https://doi.org/10.1016/..
 
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7

Characterization of interface states in AlGaN/GaN metal-oxi..:

Stoklas, R. ; Gregušová, D. ; Hasenöhrl, S....
Applied Surface Science.  461 (2018)  - p. 255-259 , 2018
Link: https://doi.org/10.1016/..
 
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8

Properties of InGaAs/GaAs metal-oxide-semiconductor heteros..:

Gregušová, D. ; Gucmann, F. ; Kúdela, R....
Applied Surface Science.  395 (2017)  - p. 140-144 , 2017
Link: https://doi.org/10.1016/..
 
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9

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxi..:

Stoklas, R ; Gregušová, D ; Blaho, M...
Semiconductor Science and Technology.  32 (2017)  4 - p. 045018 , 2017
Link: https://doi.org/10.1088/..
 
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10

Current conduction mechanism and electrical break-down in I..:

Kuzmik, J. ; Fleury, C. ; Adikimenakis, A....
Applied Physics Letters.  110 (2017)  23 - p. , 2017
Link: https://doi.org/10.1063/..
 
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11

High resolution physical analysis of ohmic contact formatio..:

Graff, A. ; Simon-Najasek, M. ; Altmann, F....
Microelectronics Reliability.  76-77 (2017)  - p. 338-343 , 2017
Link: https://doi.org/10.1016/..
 
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12

Annealing, temperature, and bias-induced threshold voltage ..:

Blaho, M. ; Gregušová, D. ; Haščík, Š....
Applied Physics Letters.  111 (2017)  3 - p. , 2017
Link: https://doi.org/10.1063/..
 
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13

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-..:

Ťapajna, M. ; Stoklas, R. ; Gregušová, D....
Applied Surface Science.  426 (2017)  - p. 656-661 , 2017
Link: https://doi.org/10.1016/..
 
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14

Technology of integrated self-aligned E/D-mode n++GaN/InAlN..:

Blaho, M ; Gregušová, D ; Haščík, Š...
Semiconductor Science and Technology.  31 (2016)  6 - p. 065011 , 2016
Link: https://doi.org/10.1088/..
 
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15

Direct electro-optical pumping for hybrid CdSe nanocrystal/..:

Mikulics, M. ; Arango, Y. C. ; Winden, A....
Applied Physics Letters.  108 (2016)  6 - p. , 2016
Link: https://doi.org/10.1063/..
 
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