E-LIB Suche - Ergebnisse für: Grote, N.

1

Integrated transmitter devices on InP exploiting electro-ab..:

Baier, M. ; Grote, N. ; Moehrle, M....
PhotoniX. 1 (2020) 1 - p. , 2020

Link: https://doi.org/10.1186/..

2

Polymer enabled 100Gbaud connectivity for datacom applicati..:

Katopodis, V. ; Groumas, P. ; Zhang, Z....
Optics Communications. 362 (2016) - p. 13-21 , 2016

Link: https://doi.org/10.1016/..

3

Complex monolithic and InP hybrid integration on high bandw..:

Groumas, P. ; Zhang, Z. ; Katopodis, V....
Optics Letters. 37 (2012) 16 - p. 3465 , 2012

Link: https://doi.org/10.1364/..

4

Generic foundry model for InP-based photonics:

Smit, M. ; Wale, M. ; Van der Tol, J....
IET Optoelectronics. 5 (2011) 5 - p. 187-194 , 2011

Link: https://doi.org/10.1049/..

5

Polymer-based photonic toolbox: passive components, hybrid ..:

Zhang, Z. ; Schell, M. ; Keil, N....
IET Optoelectronics. 5 (2011) 5 - p. 226-232 , 2011

Link: https://doi.org/10.1049/..

6

Routine growth of InP based device structures using process..:

Wolfram, P. ; Steimetz, E. ; Ebert, W...
Journal of Crystal Growth. 272 (2004) 1-4 - p. 118-124 , 2004

Link: https://doi.org/10.1016/..

7

Surface quality of InP etched with tertiarybutylchloride in..:

Franke, D. ; Sabelfeld, N. ; Ebert, W....
Journal of Crystal Growth. 248 (2003) - p. 421-425 , 2003

Link: https://doi.org/10.1016/..

8

Micro-Raman studies of vertical-cavity surface-emitting las..:

Haisler, V. A. ; Hopfer, F. ; Sellin, R. L....
Applied Physics Letters. 81 (2002) 14 - p. 2544-2546 , 2002

Link: https://doi.org/10.1063/..

9

Optical and structural properties of self-organized InGaAsN..:

Volovik, B V ; Kovsh, A R ; Passenberg, W...
Semiconductor Science and Technology. 16 (2001) 3 - p. 186-190 , 2001

Link: https://doi.org/10.1088/..

10

Comparison of MOVPE-based Zn diffusion into InGaAsP/InP usi..:

Schroeter-Janssen, H ; Roehle, H ; Franke, D...
Journal of Crystal Growth. 221 (2000) 1-4 - p. 70-74 , 2000

Link: https://doi.org/10.1016/..

11

MOVPE-based in situ etching of In(GaAs)P/InP using tertiary..:

Wolfram, P ; Ebert, W ; Kreissl, J.
Journal of Crystal Growth. 221 (2000) 1-4 - p. 177-182 , 2000

Link: https://doi.org/10.1016/..

12

Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reac..:

Franke, D. ; Reier, F.W. ; Grote, N.
Journal of Crystal Growth. 195 (1998) 1-4 - p. 112-116 , 1998

Link: https://doi.org/10.1016/..

13

Doping characteristics of undoped and Zn-doped in(Ga)AlAs l..:

Reier, F.W. ; Jahn, E. ; Agrawal, N...
Journal of Crystal Growth. 135 (1994) 3-4 - p. 463-468 , 1994

Link: https://doi.org/10.1016/..

14

MOVPE growth and characterization of InGaAs/In(GaAs)P and I..:

Agrawal, N. ; Franke, D. ; Grote, N...
Journal of Crystal Growth. 124 (1992) 1-4 - p. 610-615 , 1992

Link: https://doi.org/10.1016/..

15

Lasing characteristics of InGaAs/InGaAsP MQW structures gro..:

Rosenzweig, M. ; Ebert, W. ; Franke, D....
Journal of Crystal Growth. 107 (1991) 1-4 - p. 802-805 , 1991

Link: https://doi.org/10.1016/..