I agree that this site is using cookies. You can find further informations here.
X
Growden, T.A.
17  results:
Search for persons X
?
1

Investigation of Peak-to-Valley Current Ratio of GaN/AlN Re..:

Zhang, W.-D. ; Brown, E. R. ; Growden, T. A..
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3483-3488 , 2023
Link: https://doi.org/10.1109/..
 
?
2

Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs R..:

Brown, E.R. ; Zhang, W.-D. ; Growden, T.A...
Physical Review Applied.  16 (2021)  5 - p. , 2021
Link: https://doi.org/10.1103/..
 
?
3

RTD Light Emission around 1550 nm with IQE up to 6% at 300 :

, In: 2020 Device Research Conference (DRC),
Brown, E. R. ; Zhang, W-D. ; Fakhimi, P... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
?
4

Pulsed characteristics for high current, large area GaN/Ain..:

, In: 2019 Device Research Conference (DRC),
Growden, T.A. ; Storm, D.F. ; Cornuelle, E.M.... - p. 145-146 , 2019
Link: https://doi.org/10.1109/..
 
?
5

New Device Physics of Cross-Gap Electroluminescence in Unip..:

, In: 2019 Device Research Conference (DRC),
Fakhimi, P. ; Zhang, W-D. ; Growden, T. A.... - p. 119-120 , 2019
Link: https://doi.org/10.1109/..
 
?
6

Fabrication and Characterization of GaN/AlN Resonant Tunnel..:

, In: High-Frequency GaN Electronic Devices,
Zhang, W. D. ; Growden, T. A. ; Brown, E. R.... - p. 249-281 , 2019
Link: https://doi.org/10.1007/..
 
?
7

Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs R..:

Brown, E.R ; Zhang, W.-D ; Growden, T.A..
054008.  , 2021
Link: https://trepo.tuni.fi/ha..
 
?
8

Investigation of Switching Time in GaN/AlN Resonant Tunneli..:

Zhang, W.-D ; Growden, T. A ; Storm, D. F...
8933349.  , 2020
Link: https://trepo.tuni.fi/ha..
 
?
9

Fabrication and Characterization of GaN/AlN Resonant Tunnel..:

Growden, T. A ; Brown, E. R ; Berger, P. R..
978-3-030-20208-8.  , 2020
Link: https://trepo.tuni.fi/ha..
 
?
10

Noise Measurements of High-Speed, Light-Emitting GaN Resona..:

Brown, E. R ; Zhang, W-D ; Growden, T. A...
http://arxiv.org/abs/1806.09270.  , 2018
Link: http://arxiv.org/abs/180..
 
?
11

Strong Band-Edge Light Emission from InGaAs RTDs: Evidence ..:

Brown, E. R ; Zhang, W-D ; Growden, T. A..
http://arxiv.org/abs/1804.07666.  , 2018
Link: http://arxiv.org/abs/180..
 
?
12

Micro-Transfer Printing for Heterogeneous Integration of Ga..:

Downey, Brian P. ; Mack, Shawn ; Xie, Andy...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 2994-3000 , 2023
Link: https://doi.org/10.1109/..
 
?
13

Micro-transfer Printing of GaN HEMTs for Heterogeneous Inte..:

, In: 2020 Device Research Conference (DRC),
Downey, Brian P. ; Xie, Andy ; Mack, Shawn... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
?
14

Molecular Beam Epitaxy of Transition Metal Nitrides for Sup..:

Katzer, D. Scott ; Nepal, Neeraj ; Hardy, Matthew T....
physica status solidi (a).  217 (2020)  3 - p. , 2020
Link: https://doi.org/10.1002/..
 
?
15

Molecular Beam Epitaxy of Transition Metal Nitrides for Sup..:

Katzer, D. Scott ; Nepal, Neeraj ; Hardy, Matthew T....
physica status solidi (a).  217 (2019)  3 - p. , 2019
Link: https://doi.org/10.1002/..
 
1-15