E-LIB Suche - Ergebnisse für: Gruhle

1

Measuring the reversible heat of lithium-ion cells via curr..:

Bedürftig, B. ; Oldenburger, M. ; Hüfner, T....
Journal of Power Sources. 506 (2021) - p. 230110 , 2021

Link: https://doi.org/10.1016/..

2

Investigation of the low frequency Warburg impedance of Li-..:

Oldenburger, M. ; Bedürftig, B. ; Gruhle, A....
Journal of Energy Storage. 21 (2019) - p. 272-280 , 2019

Link: https://doi.org/10.1016/..

3

Analysis of low frequency impedance hysteresis of Li-ion ce..:

Oldenburger, M. ; Bedürftig, B. ; Richter, E....
Journal of Energy Storage. 26 (2019) - p. 101000 , 2019

Link: https://doi.org/10.1016/..

4

Hysteresis and current dependence of the graphite anode col..:

Grimsmann, F. ; Gerbert, T. ; Brauchle, F....
Journal of Energy Storage. 15 (2018) - p. 17-22 , 2018

Link: https://doi.org/10.1016/..

5

A new approach to measure the non-linear Butler–Volmer beha..:

Oldenburger, M. ; Bedürftig, B. ; Gruhle, A..
Journal of Energy Storage. 14 (2017) - p. 16-21 , 2017

Link: https://doi.org/10.1016/..

6

Hysteresis and current dependence of the thickness change o..:

Grimsmann, F. ; Brauchle, F. ; Gerbert, T....
Journal of Energy Storage. 12 (2017) - p. 132-137 , 2017

Link: https://doi.org/10.1016/..

7

Impact of different aging mechanisms on the thickness chang..:

Grimsmann, F. ; Brauchle, F. ; Gerbert, T....
Journal of Energy Storage. 14 (2017) - p. 158-162 , 2017

Link: https://doi.org/10.1016/..

8

Determining the maximum charging currents of lithium-ion ce..:

Grimsmann, F. ; Gerbert, T. ; Brauchle, F....
Journal of Power Sources. 365 (2017) - p. 12-16 , 2017

Link: https://doi.org/10.1016/..

9

Self-Aligned SiGe HBT Based on Combined Dry and Wet Etching:

Liu, Daoguang ; Xu, Shiliu ; Hao, Yue...
ECS Transactions. 3 (2006) 7 - p. 365-376 , 2006

Link: https://doi.org/10.1149/..

10

The reduction of base dopant outdiffusion in SiGe heterojun..:

Gruhle, A. ; Kibbel, H. ; König, U.
Applied Physics Letters. 75 (1999) 9 - p. 1311-1313 , 1999

Link: https://doi.org/10.1063/..

11

Design rules for n-type SiGe hetero FETs:

König, U. ; Glück, M. ; Gruhle, A....
Solid-State Electronics. 41 (1997) 10 - p. 1541-1547 , 1997

Link: https://doi.org/10.1016/..

12

Mesa and planar SiGe-HBTs on MBE-wafers:

Sch�ppen, A. ; Gruhle, A. ; Kibbel, H..
Journal of Materials Science: Materials in Electronics. 6 (1995) 5 - p. 298-305 , 1995

Link: https://doi.org/10.1007/..

13

50 GHz Si1 − xGex heterobipolar transistor: growth of the c..:

Kasper, E. ; Kibbel, H. ; Gruhle, A.
Thin Solid Films. 222 (1992) 1-2 - p. 137-140 , 1992

Link: https://doi.org/10.1016/..

14

The influence of MBE-layer design on the high frequency per..:

Gruhle, A. ; Kibbel, H. ; Kasper, E.
Microelectronic Engineering. 19 (1992) 1-4 - p. 435-438 , 1992

Link: https://doi.org/10.1016/..

15

Silicon etched-groove permeable base transistor fabrication..:

Gruhle, A. ; Badoz, P.A. ; Chevalier, F....
Microelectronic Engineering. 15 (1991) 1-4 - p. 27-30 , 1991

Link: https://doi.org/10.1016/..