E-LIB Suche - Ergebnisse für: Guo-Ping Ru

1

Thermal activation of current in an inhomogeneous Schottky ..:

Guo-Ping, Ru ; Rong, Yu ; Yu-Long, Jiang.
Chinese Physics B. 19 (2010) 9 - p. 097304 , 2010

Link: https://doi.org/10.1088/..

2

Front cover [Extended abstracts 2008 international workshop..:

, In: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08),

Yu-Long Jiang ; Xin-Ping Qu ; Guo-Ping Ru. - p. None , 2008

Link: https://doi.org/10.1109/..

3

Front cover [Extended abstracts 2008 international workshop..:

, In: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08),

Yu-Long Jiang ; Xin-Ping Qu ; Guo-Ping Ru. - p. None , 2008

Link: https://doi.org/10.1109/..

4

Effect of Pretreatment of TaN Substrates on Atomic Layer De..:

Mi, Zhou ; Tao, Chen ; Jing-Jing, Tan...
Chinese Physics Letters. 24 (2007) 5 - p. 1400-1402 , 2007

Link: https://doi.org/10.1088/..

5

I–V–Tstudies on Ni-silicide/n-Si(100) contacts formed by Ti..:

Shi-Yang, Zhu ; Guo-Ping, Ru ; Jia, Zhou.
Chinese Physics. 14 (2005) 8 - p. 1639-1643 , 2005

Link: https://doi.org/10.1088/..

6

A novel NiSi selective wet etch on Si and on SiGe:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,

Bonfanti, P. ; Hongxiang Mo ; Bei Zhu... - p. 468,469,470,471 , 2004

Link: https://doi.org/10.1109/..

7

Annealing process influence and dopant-silicide interaction..:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,

Guo-Ping Ru ; Yu-Long Jiang ; Xin-Ping Qu. - p. 451,452,453,454,455 , 2004

Link: https://doi.org/10.1109/..

8

Reactively sputtered vanadium nitride as diffusion barrier ..:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,

Xin-Ping Qu ; Mi Zhou ; Guo-Ping Ru. - p. 520,521,522,523 , 2004

Link: https://doi.org/10.1109/..

9

Ni silicide and Ni germanosilicide self-aligned process for..:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,

Hongxiang Mo ; Bonfanti, P. ; Bei Zhu... - p. 464,465,466,467 , 2004

Link: https://doi.org/10.1109/..

10

Double threshold behaviour ofI-Vcharacteristics of CoSi2/Si..:

Shi-Yang, Zhu ; Guo-Ping, Ru ; Xin-Ping, Qu...
Chinese Physics. 11 (2002) 2 - p. 156-162 , 2002

Link: https://doi.org/10.1088/..

11

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact ..:

Yu-Long, Jiang ; Guo-Ping, Ru ; Fang, Lu...
Chinese Physics Letters. 19 (2002) 4 - p. 553-556 , 2002

Link: https://doi.org/10.1088/..

12

Full geometric simulation of miniaturized GaN double-hetero..:

Sheng, Yang ; Xia, Chang Sheng ; Simon Li, Zhan Ming.
Optical and Quantum Electronics. 47 (2015) 8 - p. 2659-2666 , 2015

Link: https://doi.org/10.1007/..

13

Study of Schottky barrier height modulation for NiSi/Si con..:

Guo, Xiao ; Tang, Yang ; Jiang, Yu-Long...
Microelectronic Engineering. 106 (2013) - p. 121-124 , 2013

Link: https://doi.org/10.1016/..

14

The influence of ZnO seed layers on n-ZnO nanostructure/p-G..:

Wu, Jia-Hong ; Liu, Shu-Yi ; Li, Shuti...
Applied Physics A. 109 (2012) 2 - p. 489-495 , 2012

Link: https://doi.org/10.1007/..

15

Two-dimensional simulation of Mid-infrared quantum cascade ..:

, In: 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD),

Li, Ying-Ying ; Simon Li, Z.-M. ; Ru, Guo-Ping - p. 25-26 , 2012

Link: https://doi.org/10.1109/..