E-LIB Suche - Ergebnisse für: Gutmann, Ronald J.

1

Comparative Evaluation of Anode Layers on the Electrical Ch..:

Losee, Peter A. ; Wang, Y. ; Li, Can Hua...
Materials Science Forum. 600-603 (2008) - p. 1003-1006 , 2008

2

THREE-DIMENSIONAL INTEGRATION IN MICROELECTRONICS: MOTIVATI..:

Cale, Timothy S. ; Lu, Jian-Qiang ; Gutmann, Ronald J.
Chemical Engineering Communications. 195 (2008) 8 - p. 847-888 , 2008

Link: https://doi.org/10.1080/..

3

Low-temperature silicon wafer bonding based on Ti∕Si solid-..:

Yu, Jian ; Wang, Yinmin ; Lu, Jian-Qiang.
Applied Physics Letters. 89 (2006) 9 - p. , 2006

Link: https://doi.org/10.1063/..

4

Improving Switching Characteristics of 4H-SiC Junction Rect..:

Losee, Peter A. ; Li, Can Hua ; Kumar, R.J....
Materials Science Forum. 527-529 (2006) - p. 1363-1366 , 2006

Link: https://doi.org/10.4028/..

5

Electrical Characteristics and Reliability of 4H-SiC PiN Di..:

Losee, Peter A. ; Li, Can Hua ; Seiler, Joseph...
Materials Science Forum. 483-485 (2005) - p. 961-964 , 2005

Link: https://doi.org/10.4028/..

6

Characterization of 4H-SiC Epitaxial Layers by Microwave Ph..:

Kumar, R.J. ; Losee, Peter A. ; Li, Can Hua...
Materials Science Forum. 483-485 (2005) - p. 405-408 , 2005

Link: https://doi.org/10.4028/..

7

Thermal stresses in 3D IC inter-wafer interconnects:

Zhang, Jing ; Bloomfield, Max O. ; Lu, Jian-Qiang..
Microelectronic Engineering. 82 (2005) 3-4 - p. 534-547 , 2005

Link: https://doi.org/10.1016/..

8

A feature scale model for chemical mechanical planarization..:

Saxena, Ravi ; Thakurta, Dipto G. ; Gutmann, Ronald J..
Thin Solid Films. 449 (2004) 1-2 - p. 192-206 , 2004

Link: https://doi.org/10.1016/..

9

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs:

Matocha, Kevin ; Chow, T. Paul ; Gutmann, Ronald J.
Materials Science Forum. 457-460 (2004) - p. 1633-0 , 2004

Link: https://doi.org/10.4028/..

10

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and..:

Wang, W. ; Banerjee, S. ; Chow, T. Paul...
Materials Science Forum. 457-460 (2004) - p. 1309-1312 , 2004

Link: https://doi.org/10.4028/..

11

930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC wit..:

Wang, W. ; Banerjee, S. ; Chow, T. Paul.
Materials Science Forum. 457-460 (2004) - p. 1413-1416 , 2004

Link: https://doi.org/10.4028/..

12

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-S..:

Banerjee, S. ; Chow, T. Paul ; Gutmann, Ronald J.
Materials Science Forum. 433-436 (2003) - p. 757-760 , 2003

Link: https://doi.org/10.4028/..

13

Inverse analysis of material removal data using a multiscal..:

Seok, Jongwon ; Kim, Andrew T. ; Sukam, Cyriaque P....
Microelectronic Engineering. 70 (2003) 2-4 - p. 478-488 , 2003

Link: https://doi.org/10.1016/..

14

Innovation in Integrated Electronics and Related Technologi..:

, In: The International Handbook on Innovation,

Gutmann, Ronald J. - p. 548-555 , 2003

Link: https://doi.org/10.1016/..

15

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC..:

Chatty, K. ; Banerjee, S. ; Chow, T. Paul...
Materials Science Forum. 389-393 (2002) - p. 1041-1044 , 2002

Link: https://doi.org/10.4028/..