Guyader, F.
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1

SOI pMOS drain leakage understanding based on TCAD and meas..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Bosch, D. ; Lheritier, P. ; Guyader, F.... - p. 65-68 , 2023
 
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2

Doped Channel SOI pMOS TCAD Description Including Floating ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Lacord, J. ; Boutayeb, A. ; Bosch, D.... - p. 69-72 , 2023
 
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4

Electrical characterization of SOI pMOS device leakage:

Bosch, D. ; Lheritier, P. ; Guyader, F....
Solid-State Electronics.  208 (2023)  - p. 108740 , 2023
 
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5

3-Tier BSI CIS with 3D Sequential & Hybrid Bonding Enabling..:

, In: 2022 International Electron Devices Meeting (IEDM),
Guyader, F. ; Batude, P. ; Malinge, P.... - p. 37.4.1-37.4.4 , 2022
 
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6

3D sequential integration: applications and associated key ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Batude, P. ; Billoint, O. ; Thuries, S.... - p. 3.2.1-3.2.4 , 2021
 
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8

Detecting virus contamination in seafood:

, In: Improving Seafood Products for the Consumer,
Pintó, R ; Bosch, A ; Lees, D... , 2008
 
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9

Contributor contact details:

, In: Improving Seafood Products for the Consumer,
Børresen, Torger ; Brunsø, K. ; Brunsø, K.... - p. xv-xxiv , 2008
 
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11

Stress-induced leakage current at low field in NMOS and PMO..:

Fadlallah, M ; Ghibaudo, G ; Bidaud, M..
Microelectronic Engineering.  72 (2004)  1-4 - p. 241-246 , 2004
 
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12

Influence of nitradation in ultra-thin oxide on the gate cu..:

Fadlallah, M. ; Petit, C. ; Meinertzhagen, A....
Microelectronics Reliability.  43 (2003)  9-11 - p. 1433-1438 , 2003
 
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13

1.5–2.5 nm RTP gate oxides: process feasibility, properties..:

Bidaud, M. ; Guyader, F. ; Arnaud, F...
Journal of Non-Crystalline Solids.  280 (2001)  1-3 - p. 32-38 , 2001
 
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14

An improved method for the detection of Norwalk-like calici..:

Loisy, F. ; Le Cann, P. ; Pommepuy, M..
Letters in Applied Microbiology.  31 (2000)  6 - p. 411-415 , 2000
 
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15

Wet or dry ultrathin oxides: impact on gate oxide and devic..:

Bruyère, S ; Guyader, F ; De Coster, W...
Microelectronics Reliability.  40 (2000)  4-5 - p. 691-695 , 2000
 
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