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Ha, Minh Thien Huu
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1

Enhancement of electron transport properties of InAlGaN/AlN..:

Kao, Min-Lu ; Ha, Minh Thien Huu ; Lin, Yuan...
Applied Physics Express.  13 (2020)  6 - p. 065501 , 2020
Link: https://doi.org/10.35848..
 
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2

The effect of a Sb and Ga intermediate layer on the interfa..:

Ha, Minh Thien Huu ; Huynh, Sa Hoang ; Do, Huy Binh...
Thin Solid Films.  669 (2019)  - p. 430-435 , 2019
Link: https://doi.org/10.1016/..
 
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3

Nonlinear dependence of X-ray diffraction peak broadening i..:

Huynh, Sa Hoang ; Ha, Minh Thien Huu ; Binh Do, Huy...
Applied Physics Express.  11 (2018)  4 - p. 045503 , 2018
Link: https://doi.org/10.7567/..
 
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4

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heter..:

Ha, Minh Thien Huu ; Huynh, Sa Hoang ; Do, Huy Binh...
Applied Physics Express.  11 (2018)  5 - p. 051202 , 2018
Link: https://doi.org/10.7567/..
 
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5

Effect of Two-Step Metal Organic Chemical Vapor Deposition ..:

Yu, Hung Wei ; Anandan, Deepak ; Hsu, Ching Yi...
Journal of Electronic Materials.  47 (2017)  2 - p. 1071-1079 , 2017
Link: https://doi.org/10.1007/..
 
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6

Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs hetero..:

Huynh, Sa Hoang ; Ha, Minh Thien Huu ; Do, Huy Binh...
Applied Physics Express.  10 (2017)  7 - p. 075505 , 2017
Link: https://doi.org/10.7567/..
 
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7

Materials growth and band offset determination of Al2O3/In0..:

Huynh, Sa Hoang ; Ha, Minh Thien Huu ; Do, Huy Binh...
Applied Physics Letters.  110 (2017)  2 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Impact of interfacial misfit dislocation growth mode on hig..:

Huynh, Sa Hoang ; Ha, Minh Thien Huu ; Do, Huy Binh...
Applied Physics Letters.  109 (2016)  10 - p. , 2016
Link: https://doi.org/10.1063/..
 
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9

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Bloc..:

Weng, You-Chen ; Lin, Yueh-Chin ; Hsu, Heng-Tung...
Materials.  15 (2022)  3 - p. 703 , 2022
Link: https://doi.org/10.3390/..
 
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10

Performance improvement of highly mismatched GaSb layers on..:

Hsiao, Chih-Jen ; Ha, Minh-Thien-Huu ; Liu, Chun-Kuan...
Journal of Materials Science: Materials in Electronics.  28 (2016)  1 - p. 845-855 , 2016
Link: https://doi.org/10.1007/..
 
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11

Growth of ultrathin GaSb layer on GaAs using metal–organic ..:

Hsiao, Chih-Jen ; Ha, Minh-Thien-Huu ; Hsu, Ching-Yi...
Applied Physics Express.  9 (2016)  9 - p. 095502 , 2016
Link: https://doi.org/10.7567/..
 
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12

Performance improvements of AlGaN/GaN HEMTs by strain modif..:

Luong, Tien-Tung ; Tran, Binh Tinh ; Ho, Yen-Teng...
Electronic Materials Letters.  11 (2015)  2 - p. 217-224 , 2015
Link: https://doi.org/10.1007/..
 
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13

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Bloc..:

You-Chen Weng ; Yueh-Chin Lin ; Heng-Tung Hsu...
Electronic Materials.  , 2022
Link: https://doi.org/10.3390/..
 
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14

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Bloc..:

You-Chen Weng ; Yueh-Chin Lin ; Heng-Tung Hsu...
https://www.mdpi.com/1996-1944/15/3/703.  , 2022
Link: https://doi.org/10.3390/..
 
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15

Study of the interface stability of the metal (Mo, Ni, Pd)/..:

Huy Binh Do ; Quang Ho Luc ; Minh Thien Huu Ha...
http://dx.doi.org/10.1063/1.4986147.  , 2017
Link: https://doi.org/10.1063/..
 
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