Hahn, H.
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1

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineer..:

Kumar, S. ; Geens, K. ; Vohra, A....
IEEE Electron Device Letters.  45 (2024)  4 - p. 657-660 , 2024
 
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2

Proceedings of the Ninth International Congress of Linguist.. 

Janua Linguarum. Series Maior ; 12, Studia Memoriae Nicolai van Wijk dedicata
Lunt, Horace G. ; Allen, R. L. ; Andreyev, N. D.... - Reprint 2020 . , 2023
 
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Nitrogen flux effect on the mechanical properties of AlCrTi..:

Orjuela, F.A. ; Vallejo, F.F. ; Hahn, H....
Ceramics International.  49 (2023)  11 - p. 17867-17875 , 2023
 
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6

Acta Biologica et Medica Germanica 

Band 36, Heft 10  Acta Biologica et Medica Germanica ; Band 36, Heft 10
Abdel Karim, H. A. ; Andrade, S. F ; Augustin, H . W... - Reprint 2022 . , [2022]
 
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7

Physica status solidi 

Volume 79, Number 2: October 16  Physica status solidi ; Volume 79, Number 2, A
Abilov, Ch. I ; Abo-Namous, S. A ; Agdamskaya, S. G... - Reprint 2021 . , [2022]
 
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Laser-induced activation of Mg-doped GaN: quantitative char..:

Nardo, A ; de Santi, C ; Carraro, C...
Journal of Physics D: Applied Physics.  55 (2022)  18 - p. 185104 , 2022
 
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14

Ultra-low-vibration closed-cycle cryogenic surface-electrod..:

Dubielzig, T. ; Halama, S. ; Hahn, H....
Review of Scientific Instruments.  92 (2021)  4 - p. , 2021
 
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