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Halimaoui, A.
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1

Towards contact integration for III–V/Silicon heterogeneous..:

, In: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC),
Ghegin, E. ; Rodriguez, Ph. ; Nemouchi, F.... - p. 69-71 , 2016
Link: https://doi.org/10.1109/..
 
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2

Converting SOI to sSOI through Amorphization and Crystalliz..:

Maitrejean, S. ; Loubet, N. ; Augendre, E....
ECS Journal of Solid State Science and Technology.  4 (2015)  9 - p. P376-P381 , 2015
Link: https://doi.org/10.1149/..
 
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3

Potentialities of disilane for the low temperature epitaxy ..:

Hartmann, J.M. ; Benevent, V. ; Veillerot, M..
Thin Solid Films.  557 (2014)  - p. 19-26 , 2014
Link: https://doi.org/10.1016/..
 
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4

Ultra-thin planar fully relaxed Ge pseudo-substrate on comp..:

Aouassa, M. ; Escoubas, S. ; Ronda, A....
Applied Physics Letters.  101 (2012)  23 - p. , 2012
Link: https://doi.org/10.1063/..
 
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5

Shallow trench isolation based on selective formation of ox..:

Gharbi, A. ; Remaki, B. ; Halimaoui, A...
Microelectronic Engineering.  88 (2011)  7 - p. 1214-1216 , 2011
Link: https://doi.org/10.1016/..
 
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6

Insights into solid phase epitaxy of ultrahighly doped sili..:

Gouyé, A. ; Berbezier, I. ; Favre, L....
Journal of Applied Physics.  108 (2010)  1 - p. , 2010
Link: https://doi.org/10.1063/..
 
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7

Low-temperature solid phase epitaxy for integrating advance..:

Gouyé, A. ; Berbezier, I. ; Favre, L....
Applied Physics Letters.  96 (2010)  6 - p. , 2010
Link: https://doi.org/10.1063/..
 
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8

Selective growth of tensily strained Si1−yCy films on patte..:

Gouyé, A. ; Hüe, F. ; Halimaoui, A....
Materials Science in Semiconductor Processing.  12 (2009)  1-2 - p. 34-39 , 2009
Link: https://doi.org/10.1016/..
 
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9

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films ..:

Gouyé, A. ; Kermarrec, O. ; Halimaoui, A....
Journal of Crystal Growth.  311 (2009)  13 - p. 3522-3527 , 2009
Link: https://doi.org/10.1016/..
 
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10

Recent advances in metallic source/drain MOSFETs:

, In: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08),
Dubois, E. ; Larrieu, G. ; Breil, N.... - p. None , 2008
Link: https://doi.org/10.1109/..
 
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11

Non-melt laser annealing of Plasma Implanted Boron for ultr..:

Florakis, A. ; Misra, N. ; Grigoropoulos, C....
Materials Science and Engineering: B.  154-155 (2008)  - p. 39-42 , 2008
Link: https://doi.org/10.1016/..
 
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12

An Original Selective Etch of Pt vs. PtSi using a Low Tempe..:

Breil, N. ; Halimaoui, A. ; Dubois, E....
ECS Transactions.  6 (2007)  1 - p. 459-465 , 2007
Link: https://doi.org/10.1149/..
 
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13

Selective etching of Pt with respect to PtSi using a sacrif..:

Breil, N. ; Halimaoui, A. ; Skotnicki, T....
Applied Physics Letters.  91 (2007)  23 - p. , 2007
Link: https://doi.org/10.1063/..
 
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14

Laser annealing of plasma implanted boron for ultra-shallow..:

Florakis, A. ; Tsoukalas, D. ; Zergioti, I....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  253 (2006)  1-2 - p. 13-17 , 2006
Link: https://doi.org/10.1016/..
 
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15

Influence of the experimental procedure in the specific sur..:

Descamps, Y. ; Dufour‐Gergam, E. ; Halimaoui, A.
physica status solidi (a).  202 (2005)  8 - p. 1543-1547 , 2005
Link: https://doi.org/10.1002/..
 
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