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Hallais, G
28
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Online (28)
Mediatypes
Articles (Online) (15)
OpenAccess-fulltext (13)
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1
GaAs microcrystals selectively grown on silicon: Intrinsic ..:
Molière, T.
;
Jaffré, A.
;
Alvarez, J.
...
Journal of Applied Physics. 121 (2017) 3 - p. , 2017
Link:
https://doi.org/10.1063/..
?
2
Growth of high quality micrometer scale GaAs/Si crystals fr..:
Renard, C.
;
Cherkashin, N.
;
Jaffre, A.
...
Journal of Crystal Growth. 401 (2014) - p. 554-558 , 2014
Link:
https://doi.org/10.1016/..
?
3
Laser doping for ohmic contacts in n-type Ge:
Chiodi, F.
;
Chepelianskii, A. D.
;
Gardès, C.
...
Applied Physics Letters. 105 (2014) 24 - p. , 2014
Link:
https://doi.org/10.1063/..
?
4
Electrografting of the cyanomethyl radical onto carbon and ..:
Combellas, C.
;
Kanoufi, F.
;
Osman, Z.
...
Electrochimica Acta. 56 (2011) 3 - p. 1476-1484 , 2011
Link:
https://doi.org/10.1016/..
?
5
Cathodoluminescence spectral imaging as a technique for the..:
Avella, M.
;
Pommiés, M.
;
Jiménez, J.
...
Materials Science in Semiconductor Processing. 9 (2006) 1-3 - p. 204-209 , 2006
Link:
https://doi.org/10.1016/..
?
6
DEVELOPMENT OF MONOLITHICALLY INTEGRATED (Al)GaAs ON SILICO..:
Dentz, L
;
Chau, Guillaume
;
Hallais, G
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC2023/2CV.2.26. , 2023
Link:
https://hal.science/hal-..
?
7
DEVELOPMENT OF MONOLITHICALLY INTEGRATED (Al)GaAs ON SILICO..:
Dentz, L
;
Chau, Guillaume
;
Hallais, G
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC2023/2CV.2.26. , 2023
Link:
https://hal.science/hal-..
?
8
DEVELOPMENT OF MONOLITHICALLY INTEGRATED (Al)GaAs ON SILICO..:
Dentz, L
;
Chau, Guillaume
;
Hallais, G
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC2023/2CV.2.26. , 2023
Link:
https://hal.science/hal-..
?
9
STEM analysis of deformation and B distribution in nanoseco..:
Hallais, G
;
Patriarche, G
;
Desvignes, L
..
http://arxiv.org/abs/2208.05053. , 2022
Link:
http://arxiv.org/abs/220..
?
10
Implanted buried strained germanium rich layers in silicon:..:
Fourches, Nicolas
;
Hallais, G
;
Renard, Charles
...
hal-03374137. , 2021
Link:
https://hal.science/hal-..
?
11
Implanted buried strained germanium rich layers in silicon:..:
Fourches, Nicolas
;
Hallais, G
;
RENARD, Charles
...
hal-03374137. , 2021
Link:
https://hal.archives-ouv..
?
12
Implanted buried strained germanium rich layers in silicon:..:
Fourches, Nicolas
;
Hallais, G
;
RENARD, Charles
...
hal-03374137. , 2021
Link:
https://hal.archives-ouv..
?
13
Building blocks development for defect-free growth of GaAs ..:
Mencaraglia, Denis
;
Renard, Charles
;
Cherkashin, Nikolay
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC20192019-3BV.2.49. , 2019
Link:
https://centralesupelec...
?
14
Building blocks development for defect-free growth of GaAs ..:
Mencaraglia, Denis
;
RENARD, Charles
;
Cherkashin, Nikolay
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC20192019-3BV.2.49. , 2019
Link:
https://hal-centralesupe..
?
15
Building blocks development for defect-free growth of GaAs ..:
Mencaraglia, Denis
;
Renard, Charles
;
Cherkashin, Nikolay
...
info:eu-repo/semantics/altIdentifier/doi/10.4229/EUPVSEC20192019-3BV.2.49. , 2019
Link:
https://centralesupelec...
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