E-LIB Suche - Ergebnisse für: Hamamoto, Nariaki

1

The Detailed Analysis of Diffusion Behavior of implanted io..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),

Wada, Ryota ; Nagayama, Tsutomu ; Kuroi, Takashi. - p. 1-3 , 2023

Link: https://doi.org/10.23919..

2

Development of ultra-high-current implanter for material mo..:

Kai, Hiroaki ; Uchida, Yuya ; Kurauchi, Taido...
MRS Advances. 7 (2023) 36 - p. 1248-1252 , 2023

Link: https://doi.org/10.1557/..

3

The diffusion analysis of implanted heavy metals in 4H-SiC:

Wada, Ryota ; Hamamoto, Nariaki ; Nagayama, Tsutomu.
MRS Advances. 7 (2022) 36 - p. 1331-1337 , 2022

Link: https://doi.org/10.1557/..

4

A novel approach for highly activated p+ diffusion layer fo..:

, In: 2017 17th International Workshop on Junction Technology (IWJT),

Igo, Tetsuya ; Higuchi, Takahiro ; Nagayama, Tsutomu... - p. 13-14 , 2017

Link: https://doi.org/10.23919..

5

Ion sources for ion implantation technology (invited):

Sakai, Shigeki ; Hamamoto, Nariaki ; Inouchi, Yutaka..
Review of Scientific Instruments. 85 (2014) 2 - p. , 2014

Link: https://doi.org/10.1063/..

6

Application of cluster Ion (carbon) implantation for strain..:

, In: 2012 12th International Workshop on Junction Technology,

Sekar, Karuppanan ; Tokoro, Nobuhiro ; Onoda, Hiroshi... - p. 42-47 , 2012

Link: https://doi.org/10.1109/..

7

Phosphorous transient enhanced diffusion suppression with c..:

, In: 2012 12th International Workshop on Junction Technology,

Nakashima, Yoshiki ; Hamamoto, Nariaki ; Nagayama, Tsutomu... - p. 109-112 , 2012

Link: https://doi.org/10.1109/..

8

Cluster carbon implants — Cluster size and implant temperat..:

, In: 11th International Workshop on Junction Technology (IWJT),

Sekar, Karuppanan ; Krull, Wade ; Current, Michael... - p. 92-95 , 2011

Link: https://doi.org/10.1109/..

9

Suppression of phosphorus diffusion using cluster Carbon co..:

, In: 2010 International Workshop on Junction Technology Extended Abstracts,

Nagayama, Tsutomu ; Onoda, Hiroshi ; Tanjyo, Masayasu... - p. 1-4 , 2010

Link: https://doi.org/10.1109/..

10

Effects of cluster carbon implantation at low temperature o..:

, In: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP),

Onoda, Hiroshi ; Hamamoto, Nariaki ; Nagayama, Tsutomu... - p. 72-75 , 2010

Link: https://doi.org/10.1109/..

11

Improvement of productivity by cluster ion implanter: CLARI:

, In: 2010 International Workshop on Junction Technology Extended Abstracts,

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Umisedo, Sei... - p. 1-4 , 2010

Link: https://doi.org/10.1109/..

12

Activation of Silicon Implanted with Phosphorus and Boron A..:

Ukawa, Kan ; Kanda, Yasushi ; Sameshima, Toshiyuki...
Japanese Journal of Applied Physics. 49 (2010) 7R - p. 076503 , 2010

Link: https://doi.org/10.1143/..

13

Cluster Ion Implantation System: Claris for Beyond 45nm Dev..:

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Nagayama, Tsutomu...
ECS Transactions. 18 (2009) 1 - p. 1059-1064 , 2009

Link: https://doi.org/10.1149/..

14

22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser..:

, In: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors,

Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki... - p. None , 2009

Link: https://doi.org/10.1109/..

15

22nm node p+ junction scaling using B36H44 and laser anneal..:

, In: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors,

Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki... - p. None , 2009

Link: https://doi.org/10.1109/..