E-LIB Suche - Ergebnisse für: Harada, Shinsuke

1

3D Van der Pauw Device for MOS Channel Characterization on ..:

Hirai, Hirohisa ; Sometani, Mitsuru ; Okamoto, Mitsuo.
IEEE Electron Device Letters. 45 (2024) 4 - p. 669-672 , 2024

Link: https://doi.org/10.1109/..

2

Avalanche Stability Improvement by Boron Implanted GaN JTE ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Miura, Yoshinao ; Hirai, Hirohisa ; Nakajima, Akira. - p. 307-310 , 2024

Link: https://doi.org/10.1109/..

3

Effect of the column design and fabrication method on the r..:

Tawara, Takeshi ; Takenaka, Kensuke ; Narita, Syunki...
Materials Science in Semiconductor Processing. 176 (2024) - p. 108324 , 2024

Link: https://doi.org/10.1016/..

4

Investigations of Residual Damage in SiC Trench MOSFETs aft..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Takahashi, Mitsuki ; Yano, Hiroshi ; Iwamuro, Noriyuki. - p. 250-253 , 2023

Link: https://doi.org/10.1109/..

5

Demonstration of SiC Trench Gate MOSFETs with Narrow Cell P..:

Kimoto, Shinichi ; Iijima, Ryosuke ; Harada, Shinsuke
Key Engineering Materials. 947 (2023) - p. 63-68 , 2023

Link: https://doi.org/10.4028/..

6

Long-Term Analgesic Efficacy of Neurolytic Splanchnic Nerve..:

Yanaizumi, Ryota ; Nagamine, Yusuke ; Harada, Shinsuke...
Pain and Therapy. 12 (2023) 3 - p. 825-840 , 2023

Link: https://doi.org/10.1007/..

7

Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes ..:

Hatta, Naoki ; Ishikawa, Seiji ; Ozono, Kunihide...
Key Engineering Materials. 948 (2023) - p. 107-113 , 2023

Link: https://doi.org/10.4028/..

8

Electrical detection of TV2a-type silicon vacancy spin defe..:

Abe, Yuta ; Chaen, Akihumi ; Sometani, Mitsuru...
Applied Physics Letters. 120 (2022) 6 - p. , 2022

Link: https://doi.org/10.1063/..

9

Significant Improvement of Switching Characteristics in a 1..:

Matsui, Kevin ; Tawara, Takeshi ; Harada, Shinsuke...
IEEJ Transactions on Electrical and Electronic Engineering. 18 (2022) 2 - p. 278-285 , 2022

Link: https://doi.org/10.1002/..

10

Comparative Study of Performance of SiC SJ-MOSFETs Formed b..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sometani, Mitsuru ; Oozono, Kunihide ; Ji, Shiyang... - p. 337-340 , 2022

Link: https://doi.org/10.1109/..

11

Demonstration of the Surge Current Capability of Embedded S..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Kitamura, Yudai ; Yano, Hiroshi ; Iwamuro, Noriyuki... - p. 109-112 , 2022

Link: https://doi.org/10.1109/..

12

Realization of Monolithic SiC Power IC Utilizing the Compat..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Okamoto, Mitsuo ; Yao, Atsushi ; Sato, Hiroshi. - p. 195-197 , 2022

Link: https://doi.org/10.1109/..

13

Dipole scattering at the interface: The origin of low mobil..:

Hatakeyama, Tetsuo ; Hirai, Hirohisa ; Sometani, Mitsuru...
Journal of Applied Physics. 131 (2022) 14 - p. , 2022

Link: https://doi.org/10.1063/..

14

Wafer-scale Fabrication of Vertical GaN p-n Diodes with Gra..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Miura, Yoshinao ; Hirai, Hirohisa ; Nakajima, Akira. - p. 329-332 , 2022

Link: https://doi.org/10.1109/..

15

Study on enhancing of the surge current capabilities of emb..:

Kitamura, Yudai ; Kato, Fumiki ; Tanaka, So...
Japanese Journal of Applied Physics. 62 (2022) SC - p. SC1007 , 2022

Link: https://doi.org/10.35848..