Harrouche, Kathia
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7

Short Term Reliability and Robustness of ultra-thin barrier..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
 
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8

High Power AlN/GaN HEMTs with record power-added-efficiency..:

, In: 2020 IEEE/MTT-S International Microwave Symposium (IMS),
 
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9

High Performance and Highly Robust AlN/GaN HEMTs for Millim..:

Harrouche, Kathia ; Kabouche, Riad ; Okada, Etienne.
IEEE Journal of the Electron Devices Society.  7 (2019)  - p. 1145-1150 , 2019
 
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13

Low Trapping Effects and High Blocking Voltage in Sub-Micro..:

Carneiro, Elodie ; Rennesson, Stéphanie ; Tamariz, Sebastian...
info:eu-repo/semantics/altIdentifier/doi/10.3390/electronics12132974.  , 2023
 
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