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Hasenöhrl, Stanislav
25  results:
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1

Vertical GaN Transistor with Semi‐Insulating Channel:

Šichman, Peter ; Stoklas, Roman ; Hasenöhrl, Stanislav...
physica status solidi (a).  , 2023
Link: https://doi.org/10.1002/..
 
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2

Growth of N-polar In-rich InAlN by metal organic chemical v..:

Hasenöhrl, Stanislav ; Blaho, Michal ; Dobročka, Edmund...
Materials Science in Semiconductor Processing.  156 (2023)  - p. 107290 , 2023
Link: https://doi.org/10.1016/..
 
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3

Mg Doping of N-Polar, In-Rich InAlN:

Kuzmík, Ján ; Pohorelec, Ondrej ; Hasenöhrl, Stanislav...
Materials.  16 (2023)  6 - p. 2250 , 2023
Link: https://doi.org/10.3390/..
 
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4

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (000..:

Rosová, Alica ; Dobročka, Edmund ; Eliáš, Peter...
Nanomaterials.  12 (2022)  19 - p. 3496 , 2022
Link: https://doi.org/10.3390/..
 
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5

Near-field analysis of GaP nanocones:

Pudis, Dusan ; Urbancova, Petra ; Novak, Jozef...
Applied Surface Science.  539 (2021)  - p. 148213 , 2021
Link: https://doi.org/10.1016/..
 
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6

InN crystal habit, structural, electrical, and optical prop..:

Gucmann, Filip ; Kučera, Michal ; Hasenöhrl, Stanislav...
Semiconductor Science and Technology.  36 (2021)  7 - p. 075025 , 2021
Link: https://doi.org/10.1088/..
 
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7

Growth and Properties of N‐Polar InN/InAlN Heterostructures:

Hasenöhrl, Stanislav ; Dobročka, Edmund ; Stoklas, Roman...
physica status solidi (a).  217 (2020)  19 - p. , 2020
Link: https://doi.org/10.1002/..
 
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8

Effect of temperature and carrier gas on the properties of ..:

Chauhan, Prerna ; Hasenöhrl, Stanislav ; Dobročka, Edmund...
Applied Surface Science.  470 (2019)  - p. 1-7 , 2019
Link: https://doi.org/10.1016/..
 
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9

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconducto..:

Gregušová, Dagmar ; Tóth, Lajos ; Pohorelec, Ondrej...
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SCCD21 , 2019
Link: https://doi.org/10.7567/..
 
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10

Generation of hole gas in non-inverted InAl(Ga)N/GaN hetero..:

Hasenöhrl, Stanislav ; Chauhan, Prerna ; Dobročka, Edmund...
Applied Physics Express.  12 (2018)  1 - p. 014001 , 2018
Link: https://doi.org/10.7567/..
 
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11

Reinforcement role of GaP nanowires in a ZnO layer prepared..:

Novák, Jozef ; Laurenčíková, Agáta ; Hasenohrl, Stanislav...
Vacuum.  138 (2017)  - p. 218-223 , 2017
Link: https://doi.org/10.1016/..
 
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12

Annealing of gold nanoparticles on GaP(111)B: initial stage..:

Eliáš, Peter ; Hasenöhrl, Stanislav ; Laurencíková, Agáta..
physica status solidi (RRL) – Rapid Research Letters.  8 (2014)  4 - p. 321-324 , 2014
Link: https://doi.org/10.1002/..
 
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13

Analysis of the core–shell interface between zinc-blende Ga..:

Laurenčíková, Agáta ; Eliáš, Peter ; Hasenöhrl, Stanislav...
Solid-State Electronics.  100 (2014)  - p. 7-10 , 2014
Link: https://doi.org/10.1016/..
 
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14

NSOM Lithography for Organized Growth of Gap Nanowires:

Lettrichova, Ivana ; Pudis, Dusan ; Laurencikova, Agata...
Communications - Scientific letters of the University of Zilina.  16 (2014)  1 - p. 21-25 , 2014
Link: https://doi.org/10.26552..
 
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15

Zinc-doped gallium phosphide nanowires for photovoltaic str..:

Hasenöhrl, Stanislav ; Eliáš, Peter ; Šoltýs, Ján...
Applied Surface Science.  269 (2013)  - p. 72-76 , 2013
Link: https://doi.org/10.1016/..
 
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