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Hasenack, Claus M.
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1

A mechanism for electroless Cu plating onto Si:

dos Santos Filho, Sebastião G. ; Pasa, AndréA. ; Hasenack, Claus M.
Microelectronic Engineering.  33 (1997)  1-4 - p. 149-155 , 1997
Link: https://doi.org/10.1016/..
 
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2

Electrochemical Evidence of a Copper‐Induced Etching of n‐T..:

Martins, L. F. O. ; Seligman, L. ; Santos Filho, S. G....
Journal of The Electrochemical Society.  144 (1997)  5 - p. L106-L108 , 1997
Link: https://doi.org/10.1149/..
 
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3

A Less Critical Cleaning Procedure for Silicon Wafer Using ..:

Filho, Sebastião Gomes dos Santos ; Hasenack, Claus Martin ; Salay, Luiz Carlos.
Journal of The Electrochemical Society.  142 (1995)  3 - p. 902-907 , 1995
Link: https://doi.org/10.1149/..
 
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4

Rapid thermal oxidation of silicon with different thermal a..:

Filho, S G dos Santos ; Hasenack, C M ; Lopes, M C V.
Semiconductor Science and Technology.  10 (1995)  7 - p. 990-996 , 1995
Link: https://doi.org/10.1088/..
 
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5

Numerical Calculations of the Electrical Effects Induced by..:

Lopes, M. C. Valente ; Hasenack, C. M. ; Baranauskas, V.
Journal of The Electrochemical Society.  141 (1994)  6 - p. 1621-1628 , 1994
Link: https://doi.org/10.1149/..
 
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6

The Impact of Si / SiO2 Interface Asperities on Breakdown C..:

Lopes, Manoel Cézar Valente ; Hasenack, Claus Martin
Journal of The Electrochemical Society.  139 (1992)  10 - p. 2909-2912 , 1992
Link: https://doi.org/10.1149/..
 
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7

The influence of the heating rate on the annealing behaviou..:

Hasenack, C M ; Souza, J P de ; Erichsen Jr, R
Semiconductor Science and Technology.  3 (1988)  10 - p. 979-982 , 1988
Link: https://doi.org/10.1088/..
 
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8

The doping of silicon with boron by rapid thermal processin:

Souza, J P de ; Hasenack, C M ; Swart, J E
Semiconductor Science and Technology.  3 (1988)  4 - p. 277-280 , 1988
Link: https://doi.org/10.1088/..
 
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9

Prolonged and rapid thermal annealing of boron implanted si..:

Peter, C. R. ; de Souza, J. P. ; Hasenack, C. M.
Journal of Applied Physics.  64 (1988)  5 - p. 2696-2699 , 1988
Link: https://doi.org/10.1063/..
 
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10

The suppression of residual defects of silicon implanted wi..:

Hasenack, C M ; Souza, J P de ; Baumvol, I J R
Semiconductor Science and Technology.  2 (1987)  8 - p. 477-484 , 1987
Link: https://doi.org/10.1088/..
 
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11

Residual defects in implanted silicon submitted to RTA: Evi..:

Hasenack, C.M. ; de Souza, J.P. ; Baumvol, I.J.R.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  14 (1986)  3 - p. 290-293 , 1986
Link: https://doi.org/10.1016/..
 
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12

A channelling and conversion electron Mossbauer spectroscop..:

Scherer, Elza M ; Souza, J P de ; Hasenack, C M.
Semiconductor Science and Technology.  1 (1986)  4 - p. 241-245 , 1986
Link: https://doi.org/10.1088/..
 
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13

The suppression of residual defects in silicon implanted wi..:

Hasenack, C.M. ; De Souza, J.P. ; Baumvol, I.J.R.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  9 (1985)  3 - p. 341-343 , 1985
Link: https://doi.org/10.1016/..
 
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14

Mechanisms of Cu Electroless Plating onto Si(100) in Dilute..:

Dos Santos, Sebastião G. ; Hashimoto, Alexandre ; Hasenack, Claus
ECS Transactions.  11 (2008)  23 - p. 13-22 , 2008
Link: https://doi.org/10.1149/..
 
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15

Placental transfer of org 10172, a low-molecular weight hep..:

Peeters, L.L.H. ; Hobbelen, P.M.J. ; Verkeste, C.M....
Thrombosis Research.  44 (1986)  3 - p. 277-283 , 1986
Link: https://doi.org/10.1016/..
 
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