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Hashimoto, Tadao
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1

Breakdown characteristics analysis of kV-class vertical GaN..:

Xu, Zhiyu ; Daeumer, Matthias A. ; Cho, Minkyu...
Journal of Applied Physics.  135 (2024)  20 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floati..:

Cho, Minkyu ; Xu, Zhiyu ; Bakhtiary-Noodeh, Marzieh...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4578-4583 , 2023
Link: https://doi.org/10.1109/..
 
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3

Resistivity of manganese doped GaN grown by near equilibriu..:

Hashimoto, Tadao ; Key, Daryl ; Letts, Edward...
Journal of Crystal Growth.  621 (2023)  - p. 127364 , 2023
Link: https://doi.org/10.1016/..
 
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4

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of..:

Hashimoto, Tadao ; Letts, Edward R. ; Key, Daryl
Crystals.  12 (2022)  8 - p. 1085 , 2022
Link: https://doi.org/10.3390/..
 
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5

Assessment of dislocation reduction on 100 mm diameter bulk..:

Key, Daryl ; Jordan, Benjamin ; Letts, Ed.
Japanese Journal of Applied Physics.  61 (2022)  3 - p. 030903 , 2022
Link: https://doi.org/10.35848..
 
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6

Structural and Electrical Characterization of 2" Ammonother..:

Key, Daryl ; Letts, Edward ; Tsou, Chuan-Wei...
Materials.  12 (2019)  12 - p. 1925 , 2019
Link: https://doi.org/10.3390/..
 
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7

Two inch GaN substrates fabricated by the near equilibrium ..:

Hashimoto, Tadao ; Letts, Edward R. ; Key, Daryl.
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SC1005 , 2019
Link: https://doi.org/10.7567/..
 
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8

X-ray characterization technique for the assessment of surf..:

Letts, Edward ; Sun, Yimeng ; Key, Daryl..
Journal of Crystal Growth.  501 (2018)  - p. 13-17 , 2018
Link: https://doi.org/10.1016/..
 
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9

Reduction of crack density in ammonothermal bulk GaN growth:

Letts, Edward ; Key, Daryl ; Hashimoto, Tadao
Journal of Crystal Growth.  456 (2016)  - p. 27-32 , 2016
Link: https://doi.org/10.1016/..
 
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10

Defect structure of a free standing GaN wafer grown by the ..:

Sintonen, Sakari ; Suihkonen, Sami ; Jussila, Henri...
Journal of Crystal Growth.  406 (2014)  - p. 72-77 , 2014
Link: https://doi.org/10.1016/..
 
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11

Development of GaN wafers via the ammonothermal method:

Letts, Edward ; Hashimoto, Tadao ; Hoff, Sierra...
Journal of Crystal Growth.  403 (2014)  - p. 3-6 , 2014
Link: https://doi.org/10.1016/..
 
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12

Development of GaN wafers for solid-state lighting via the ..:

Letts, Edward ; Hashimoto, Tadao ; Ikari, Masanori.
Journal of Crystal Growth.  350 (2012)  1 - p. 66-68 , 2012
Link: https://doi.org/10.1016/..
 
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13

Improvement of structural quality in the initial stage of G..:

Nojima, Yoshihiro ; Ikari, Masanori ; Letts, Edward.
Journal of Crystal Growth.  317 (2011)  1 - p. 132-134 , 2011
Link: https://doi.org/10.1016/..
 
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14

Improvement of crystal quality in ammonothermal growth of b..:

Hashimoto, Tadao ; Letts, Edward ; Ikari, Masanori.
Journal of Crystal Growth.  312 (2010)  18 - p. 2503-2506 , 2010
Link: https://doi.org/10.1016/..
 
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15

Evaluation of GaN substrates grown in supercritical basic a..:

Saito, Makoto ; Yamada, Hisashi ; Iso, Kenji...
Applied Physics Letters.  94 (2009)  5 - p. , 2009
Link: https://doi.org/10.1063/..
 
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