Hayashi, Shin-ichiro
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1

Reliability under High Gate-Voltage Condition on SiC MOSFET..:

, In: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia),
 
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2

Operational Verification of Gate Drive Circuit With Conditi..:

Hayashi, Shin-Ichiro ; Wada, Keiji
IEEE Open Journal of Power Electronics.  5 (2024)  - p. 709-717 , 2024
 
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4

High-Performance Driving of SiC MOSFETs to Implement Short-..:

, In: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia),
Hayashi, Shin-Ichiro ; Wada, Keiji - p. 1485-1490 , 2023
 
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5

Measurement of spatial fluence distribution of neutrons and..:

Tanaka, Kenichi ; Kajimoto, Tsuyoshi ; Mitsuyasu, Aruma...
Journal of Physics: Conference Series.  2167 (2022)  1 - p. 012006 , 2022
 
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6

Equalization of DC and Surge Components of Drain Current of..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),
Horii, Kohei ; Morikawa, Ryuzo ; Katada, Ryunosuke... - p. 1406-1412 , 2022
 
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8

Gate Drive Circuit with In situ Condition Monitoring System..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),
Hayashi, Shin-Ichiro ; Wada, Keiji - p. 1838-1845 , 2022
 
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9

Effects of PVA-GTA-I radiochromic gel dosimeter components ..:

Hayashi, Shin-ichiro ; Ono, Kaoru ; Fujino, Keisuke.
Journal of Physics: Conference Series.  2167 (2022)  1 - p. 012014 , 2022
 
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11

Design a Continuous Switching Test Circuit for Power Device..:

Hayashi, Shin-Ichiro ; Wada, Keiji
IEEJ Journal of Industry Applications.  11 (2022)  1 - p. 108-116 , 2022
 
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15

Impact of Percutaneous Revascularization on Left Ventricula..:

Iwashima, Yoshio ; Fukuda, Tetsuya ; Horio, Takeshi...
American Journal of Hypertension.  33 (2020)  6 - p. 570-580 , 2020
 
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