E-LIB Suche - Ergebnisse für: Heikman, S.

1

Vapor-phase epitaxy of gallium nitride by gallium arc disch..:

Heikman, S. ; Keller, S. ; Mishra, U.K.
Journal of Crystal Growth. 293 (2006) 2 - p. 335-343 , 2006

Link: https://doi.org/10.1016/..

2

Nitride-based high electron mobility transistors with a GaN..:

Palacios, T. ; Shen, L. ; Keller, S....
Applied Physics Letters. 89 (2006) 7 - p. , 2006

Link: https://doi.org/10.1063/..

3

Demonstration of a GaN‐spacer high electron mobility transi..:

Palacios, T. ; Shen, L. ; Keller, S....
physica status solidi (a). 202 (2005) 5 - p. 837-840 , 2005

Link: https://doi.org/10.1002/..

4

Switching characteristics of high-breakdown voltage AlGaN/G..:

, In: 63rd Device Research Conference Digest, 2005. DRC '05.,

Dora, Y. ; Suh, C. ; Chakraborty, A.... - p. 191,192 , 2005

Link: https://doi.org/10.1109/..

5

High power GaN oscillators using field-plated HEMT structur:

, In: IEEE MTT-S International Microwave Symposium Digest, 2005.,

Hongtao Xu ; Sanabria, C. ; Heikman, S.... - p. None , 2005

Link: https://doi.org/10.1109/..

6

Unpassivated GaN/AlGaN/GaN power high electron mobility tra..:

Shen, L. ; Coffie, R. ; Buttari, D....
Journal of Electronic Materials. 33 (2004) 5 - p. 422-425 , 2004

Link: https://doi.org/10.1007/..

7

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN s..:

Buttari, D. ; Chini, A. ; Palacios, T....
Applied Physics Letters. 83 (2003) 23 - p. 4779-4781 , 2003

Link: https://doi.org/10.1063/..

8

Growth and characteristics of Fe-doped GaN:

Heikman, S. ; Keller, S. ; Mates, T...
Journal of Crystal Growth. 248 (2003) - p. 513-517 , 2003

Link: https://doi.org/10.1016/..

9

GaN–GaN junctions with ultrathin AlN interlayers: Expanding..:

Keller, S. ; Heikman, S. ; Shen, L....
Applied Physics Letters. 80 (2002) 23 - p. 4387-4389 , 2002

Link: https://doi.org/10.1063/..

10

Erratum: "AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional elec..:

Smorchkova, I. P. ; Chen, L. ; Mates, T....
Journal of Applied Physics. 91 (2002) 7 - p. 4780-4780 , 2002

Link: https://doi.org/10.1063/..

11

Gallium nitride based transistors:

Xing, H ; Keller, S ; Wu, Y-F...
Journal of Physics: Condensed Matter. 13 (2001) 32 - p. 7139-7157 , 2001

Link: https://doi.org/10.1088/..

12

Indium-surfactant-assisted growth of high-mobility AlN/GaN ..:

Keller, S. ; Heikman, S. ; Ben-Yaacov, I....
Applied Physics Letters. 79 (2001) 21 - p. 3449-3451 , 2001

Link: https://doi.org/10.1063/..

13

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas s..:

Smorchkova, I. P. ; Chen, L. ; Mates, T....
Journal of Applied Physics. 90 (2001) 10 - p. 5196-5201 , 2001

Link: https://doi.org/10.1063/..

14

Two-dimensional electron-gas AlN/GaN heterostructures with ..:

Smorchkova, I. P. ; Keller, S. ; Heikman, S....
Applied Physics Letters. 77 (2000) 24 - p. 3998-4000 , 2000

Link: https://doi.org/10.1063/..

15

Metalorganic chemical vapor deposition of high mobility AlG..:

Keller, S. ; Parish, G. ; Fini, P. T....
Journal of Applied Physics. 86 (1999) 10 - p. 5850-5857 , 1999

Link: https://doi.org/10.1063/..