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Hirashita, N.
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1

Retention and thermal desorption of helium in pure tungsten:

Xu, Q. ; Zhang, J. ; Maejima, K..
Philosophical Magazine Letters.  96 (2016)  12 - p. 477-481 , 2016
Link: https://doi.org/10.1080/..
 
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2

Formation process of high-purity Ge-on-insulator layers by ..:

Nakaharai, S. ; Tezuka, T. ; Hirashita, N....
Journal of Applied Physics.  105 (2009)  2 - p. , 2009
Link: https://doi.org/10.1063/..
 
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3

Ge wire MOSFETs fabricated by three-dimensional Ge condensa..:

Irisawa, T. ; Numata, T. ; Hirashita, N....
Thin Solid Films.  517 (2008)  1 - p. 167-169 , 2008
Link: https://doi.org/10.1016/..
 
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4

The formation of SGOI structures with low dislocation densi..:

Sugiyama, N ; Nakaharai, S ; Hirashita, N...
Semiconductor Science and Technology.  22 (2006)  1 - p. S59-S62 , 2006
Link: https://doi.org/10.1088/..
 
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5

Characterization of in-plane strain relaxation in strained ..:

Usuda, K ; Irisawa, T ; Numata, T..
Semiconductor Science and Technology.  22 (2006)  1 - p. S227-S230 , 2006
Link: https://doi.org/10.1088/..
 
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6

The generation of crystal defects in Ge-on-insulator (GOI) ..:

Nakaharai, S ; Tezuka, T ; Hirashita, N...
Semiconductor Science and Technology.  22 (2006)  1 - p. S103-S106 , 2006
Link: https://doi.org/10.1088/..
 
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7

Strain relaxation in strained-Si layers on SiGe-on-insulato..:

Hirashita, N ; Moriyama, Y ; Sugiyama, N..
Semiconductor Science and Technology.  22 (2006)  1 - p. S21-S25 , 2006
Link: https://doi.org/10.1088/..
 
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8

Analysis of growth rate during Si epitaxy by hydrogen cover..:

Sugiyama, N. ; Hirashita, N. ; Mizuno, T...
Materials Science in Semiconductor Processing.  8 (2005)  1-3 - p. 11-14 , 2005
Link: https://doi.org/10.1016/..
 
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9

Chemistry and band offsets of HfO2 thin films on Si reveale..:

Toyoda, S ; Okabayashi, J ; Kumigashira, H...
Journal of Electron Spectroscopy and Related Phenomena.  137-140 (2004)  - p. 141-144 , 2004
Link: https://doi.org/10.1016/..
 
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10

Fully depleted SOI process and device technology for digita..:

Ichikawa, F. ; Nagatomo, Y. ; Katakura, Y....
Solid-State Electronics.  48 (2004)  6 - p. 999-1006 , 2004
Link: https://doi.org/10.1016/..
 
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11

Synchrotron-radiation deep level transient spectroscopy for..:

Fujioka, H. ; Sekiya, T. ; Kuzuoka, Y....
Applied Physics Letters.  85 (2004)  3 - p. 413-415 , 2004
Link: https://doi.org/10.1063/..
 
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12

Chemistry and band offsets of HfO2 thin films for gate insu..:

Oshima, M. ; Toyoda, S. ; Okumura, T....
Applied Physics Letters.  83 (2003)  11 - p. 2172-2174 , 2003
Link: https://doi.org/10.1063/..
 
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13

Effect of nitrogen doping into SiO2 studied by photoemissio..:

Toyoda, S. ; Okabayashi, J. ; Kumigashira, H....
Applied Physics Letters.  83 (2003)  26 - p. 5449-5451 , 2003
Link: https://doi.org/10.1063/..
 
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14

Interfacial chemistry and structures of ultrathin Si oxynit..:

Oshima, M. ; Kimura, K. ; Ono, K....
Applied Surface Science.  216 (2003)  1-4 - p. 291-295 , 2003
Link: https://doi.org/10.1016/..
 
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15

Initial oxidation features of Si(100) studied by Si2p core-..:

Oh, J.H. ; Nakamura, K. ; Ono, K....
Journal of Electron Spectroscopy and Related Phenomena.  114-116 (2001)  - p. 395-399 , 2001
Link: https://doi.org/10.1016/..
 
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